Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors
Release time:2021-06-02
Hits:
- Affiliation of Author(s):
- 微电子学院
- Journal:
- Physica E-Low-Dimensional Systems & Nanostructures
- First Author:
- 崔鹏
- Indexed by:
- Applied Research
- Document Code:
- 149EE7B80B0A4D05A717EA8A1E60AAFD
- Volume:
- 119
- Translation or Not:
- no
- Date of Publication:
- 2020-05-01