Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors
Release Time:2021-06-02
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors
- Journal:
- Physica E-Low-Dimensional Systems & Nanostructures
- First Author:
- 崔鹏
- Document Code:
- 149EE7B80B0A4D05A717EA8A1E60AAFD
- Volume:
- 119
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2020-05
- Release Time:
- 2021-06-02