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A submicron split-gate AlGaN/GaN heterostructure field-effect transistor for class-A common-source voltage amplifier applications

Release time:2022-12-10
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Affiliation of Author(s):
集成电路学院
Journal:
Micro and Nanostructures
First Author:
刘阳
Document Code:
A3DAC3F30E7A4A79A212D05719E0F31A
Issue:
207319
Number of Words:
5
Translation or Not:
no
Date of Publication:
2022-06-15