A submicron split-gate AlGaN/GaN heterostructure field-effect transistor for class-A common-source voltage amplifier applications
Release Time:2022-12-10
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- A submicron split-gate AlGaN/GaN heterostructure field-effect transistor for class-A common-source voltage amplifier applications
- Journal:
- Micro and Nanostructures
- First Author:
- 刘阳
- Document Code:
- A3DAC3F30E7A4A79A212D05719E0F31A
- Issue:
- 207319
- Number of Words:
- 5
- Translation or Not:
- No
- Date of Publication:
- 2022-06
- Release Time:
- 2022-12-10