Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETs
Release Time:2024-11-21
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETs
- Journal:
- APPLIED PHYSICS LETTERS
- First Author:
- 王鸣雁
- Document Code:
- 51AD8BC7588A4CD3A8FBDF68C546B47F
- Issue:
- 124
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2024-04
- Release Time:
- 2024-11-21