Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETs
Release time:2024-11-21
Hits:
- Affiliation of Author(s):
- 集成电路学院
- Journal:
- Applied Physics Letters
- First Author:
- 王鸣雁
- Document Code:
- 51AD8BC7588A4CD3A8FBDF68C546B47F
- Issue:
- 124
- Number of Words:
- 3000
- Translation or Not:
- no
- Date of Publication:
- 2024-04-08