Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors
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所属单位：微电子学院
发表刊物：Physica E-Low-Dimensional Systems & Nanostructures
第一作者：崔鹏
论文类型：应用研究
论文编号：149EE7B80B0A4D05A717EA8A1E60AAFD
卷号：119
是否译文：否
发表时间：2020-05-01
发表时间：2020-05-01
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