一种利用纳米压痕技术提高发光二极管（LED）光提取效率的方法
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Title:一种利用纳米压痕技术提高发光二极管（LED）光提取效率的方法
Institution:晶体材料研究所
Type of Patent:发明
Application Number:2014104069951
Number of Inventors:14
Service Invention or Not:No
Application Date:2014-08-18
Publication Date:2017-01-25
Authorization Date:2014-08-18
Release Time:2018-07-04