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一种利用纳米压痕技术提高发光二极管（LED）光提取效率的方法

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Affilication of Author(s):晶体材料研究所

Type of Patent:发明

Application Number:2014104069951

Number of Inventors:14

Service Invention or Not:no

Application Date:2014-08-18

Publication Date:2017-01-25

Authorization Date:2014-08-18

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