Distinct Photoinduced Wetting Transitions of Differently Doped GaN: An Indication of Collective Behavior

发布时间:2019-10-24| 点击次数:

所属单位:晶体材料研究院(晶体材料全国重点实验室)

论文名称:Distinct Photoinduced Wetting Transitions of Differently Doped GaN: An Indication of Collective Behavior

发表刊物:Journal of Physical Chemistry C

第一作者:贾冉

全部作者:李曦,刘铎

论文编号:59EEE9A7AADA485E89BF46421BDFEE37

卷号:122

期号:43

页面范围:24818

是否译文:否

发表时间:2018-11

发布时间:2019-10-24