Title : Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications
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Affiliation of Author(s):海洋研究院
Title of Paper:Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications
Journal:Nanoscale
Key Words:光电器件，二维材料
First Author:张宇
Document Code:707500A5C8C54E009C1AB6CCAEF4D61A
Issue:12
Page Number:18356
Number of Words:6000
Translation or Not:no
Date of Publication:2020-09-17
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