Title : Construction of High Field-Effect Mobility Multilayer MoS2-Field-Effect Transistors with Excellent Stability through Interface Engineering

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Affiliation of Author(s):微电子学院

Title of Paper:Construction of High Field-Effect Mobility Multilayer MoS2-Field-Effect Transistors with Excellent Stability through Interface Engineering

Journal:ACS Applied Electronic Materials

Key Words:二维材料与器件

First Author:张宇

Indexed by:Applied Research

Document Code:7E4E2A8FDBF54B32AF4F39842111CC0D

Issue:2

Page Number:2132

Translation or Not:no

Date of Publication:2020-06-16