Title : Construction of High Field-Effect Mobility Multilayer MoS2-Field-Effect Transistors with Excellent Stability through Interface Engineering

Hits :

Affiliation of Author(s):集成电路学院

Title of Paper:Construction of High Field-Effect Mobility Multilayer MoS2-Field-Effect Transistors with Excellent Stability through Interface Engineering

Journal:ACS Applied Electronic Materials

Key Words:二维材料与器件

First Author:张宇

Document Code:7E4E2A8FDBF54B32AF4F39842111CC0D

Issue:2

Page Number:2132

Number of Words:3500

Translation or Not:no

Date of Publication:2020-06-16