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Characterization of tunable band gap aluminum indium oxide films prepared on SiO2 (0001) by MOCVD

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Journal of Materials Science: Materials in Electronics
All the Authors:
Ma Jin,luancaina
First Author:
马瑾
Document Code:
lw-178176
Number of Words:
4
Translation or Not:
no
Date of Publication:
2016-01-08