教师个人主页
教师个人主页
Research direction: Wide bandgap oxide semiconductor materials
山东大学 ，集成电路学院
山东大学 ，微电子学院
山东大学 ，物理与微电子学院
山东大学
山东轻工业学院
| 本科生课程名称 | 学期 | 学分 | 课程号 |
|---|---|---|---|
|
医学物理概论 |
春学期 |
2.0 |
sd04031040 |
|
电子线路课程设计 |
春学期 |
1.0 |
sd04031080 |
| 名称 | 简介 |
|---|---|
|
宽带隙氧化物半导体材料 |
物理学类其他专业；宽带隙氧化物半导体材料 |
| 项目名称 | 项目周期 |
|---|---|
|
钛酸锌和锡酸锌单晶薄膜的异质外延生长及性质研究 |
2018/08/16,2022/12/31 |
|
可用于下一代光电器件的Beta-氧化镓单晶薄膜的制备及性质研究 |
2018/04/01,2020/12/31 |
|
（包干项目）新型铟铝锌氧肖特基势垒二极管的研究 |
2021/12/23,2024/12/31 |
|
可转移的、稀土元素掺杂的Beta-氧化镓基发光二极管的制备及性能研究 |
2019/04/26,2022/06/30 |
|
高质量锌锡氧化物透明导电薄膜的制备 |
2007/12/01,2010/12/31 |
|
基于能带工程/应力调控的高效InGaN基红光LED的研究 |
2016/08/17,2020/12/31 |
|
面向大厚度高效聚合物光伏器件的活性层形态结构和载流子复合的调控 |
2015/08/17,2019/12/31 |
|
利用纳米孔（柱）阵列同时提高LED内、外量子效率的研究 |
2015/01/01,2017/12/31 |
|
基于层状双氢氧化物纳米复合材料的杂化太阳能电池的制备及性能研究 |
2013/08/15,2017/12/31 |
|
具有纳米孔（柱）阵列的LED结构的制备及量子效率的研究 |
2013/01/01,2015/12/31 |
|
可调带隙铝-铟氧化物半导体薄膜材料的制备及性质研究 |
2012/08/17,2016/12/31 |
|
氧迁移影响下的HfO2阻变存储器机理及其制备研究 |
2012/07/31,2015/07/31 |
|
尺寸可控的柔性GaN基纳米薄膜的制备及特性研究 |
2012/01/01,2014/12/31 |
|
高效无镉太阳能电池MgZnO缓冲层特性研究 |
2011/07/01,2014/07/01 |
|
钴/稀土离子共掺杂ZnGa2O4纳米材料的微观结构与性能研究 |
2010/11/01,2013/11/01 |
|
Beta-氧化镓单晶薄膜的外延生长及性质研究 |
2011/01/01,2013/12/31 |
|
低温等离子体辅助MOCVD技术制备AlInN薄膜材料的生长及掺杂特性研究 |
2011/01/01,2013/12/31 |
|
单晶氧化锡外延薄膜的制备及性能研究 |
2009/01/01,2011/12/30 |
|
镓铟氧化物深紫外透明半导体薄膜的制备及特性研究 |
2007/01/01,2009/12/31 |
|
高质量n型氧化亚铜薄膜及其同质结太阳能电池的研究 |
2016/08/17,2019/12/31 |
|
基于XPS和XAFS技术的掺质磷酸钛氧铷晶体的微观结构及其与性能关系的研究 |
2016/08/17,2020/12/31 |
|
二氧化钛外延单晶薄膜的制备及其特性研究 |
2014/08/15,2018/12/31 |
|
钽掺杂氧化锡外延单晶薄膜的制备、结构及其光电性质的研究 |
2016/08/17,2019/12/31 |
【1】张彪.Hexagonal ZnTiO3 single-crystalline films on α-Al2O3 substrates: Structural and photoelectric properties. JOURNAL OF ALLOYS AND COMPOUNDS , 1008,2024.
【2】陈蓉蓉.High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctionsVACUUM:112332,2023.
【3】朱宏艳.Effect of oxygen pressure during the growth of ZnSnO3 epitaxial thin films on LiNbO3 substratesApplied Surface Science:158029,2023.
【4】陈蓉蓉.High crystal quality β-Ga2O3 epitaxial films grown on porous n-GaN substratesMaterials Science in Semiconductor Processing:107859,2023.
【5】冯博.Self-powered ultraviolet photodetectors based on CuInO2: Ca/GaN epitaxial heterojunctionCeramics International:12779,2023.
【6】陈蓉蓉.Self-powered deep ultraviolet PIN photodetectors with excellent response performance based on Ga2O3 epitaxial films grown on p-GaNAPPLIED PHYSICS LETTERS,2023.
【7】刘杰.Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example. JOURNAL OF ALLOYS AND COMPOUNDS , 892,2022.
【8】朱宏艳.High-quality and single-crystal ZnSnO3 thin films: Fabrication and properties. VACUUM, 197,2022.
【9】刘杰.Preparation of large-area, high quality, free-standing GaN distributed Bragg reflectors. MATERIALS LETTERS Journal, 311,2022.
【10】乐永.High performance UV photodetectors based on W doped δ-Ta2O5 single crystalline films. APPLIED PHYSICS LETTERS, 122,2023.
【11】张彪.Hexagonal ZnTiO3 monocrystalline films on LiNbO3 substrates: Structural and optical properties. Ceramics International, 49:23805,2023.
【12】.High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctionsVACUUM,2023.
【13】.Hexagonal ZnTiO3 monocrystalline films on LiNbO3 substrates: Structural and optical propertiesCeramics International,2023.
【14】马瑾.Heteroepitaxial growth of the δ-Ta2O5 films on a-Al2O3(0001)Journal of Materials Science-Materials in Electronics,2022.
【15】马瑾.Fabrication and characterization of monocrystalline Zn2TiO4 films on MgO (111) substrates by PLDFUNCTIONAL MATERIALS LETTERS:1,2022.
【16】马瑾.Heteroepitaxial growth of the orthorhombic Ta2O5 single-crystalline films on epi-GaN/α-Al2O3 (0001) substrates by MOCVDCERAMICS INTERNATIONAL Journal:26800,2022.
【17】王迪.Solar-blind ultraviolet photodetectors based on Ta-doped β-Ga2O3 heteroepitaxial films. OPTICAL MATERIALS, 129,2022.
【18】肖洪地.Ta-Doped Ga2O3 Epitaxial Films on Porous p？GaN Substrates: Structure and Self-Powered Solar-Blind PhotodetectorsJournal of crystal growth:5285,2022.
【19】刘杰.Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example. JOURNAL OF ALLOYS AND COMPOUNDS , 892,2022.
【20】朱宏艳.High-quality and single-crystal ZnSnO3 thin films: Fabrication and properties. VACUUM, 197,2022.
【21】栾彩娜.Preparation and characterization of heteroepitaxial Zn2SnO4 single crystalline films prepared on MgO (100) substrates. Journal of the American Ceramic Society, 103:2555,2020.
【22】栾彩娜.Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substratesMaterials letters,2021.
【23】栾彩娜.Effect of niobium doping on the structural, electrical and optical properties of epitaxial SnO2 films on MgF2 (110) substrates by MOCVDJOURNAL OF ALLOYS AND COMPOUNDS ,2018.
【24】栾彩娜.Characterization of Rutile SnO2 Epitaxial Films Grown on MgF2 (001) Substrates by MOCVD. CRYSTAL RESEARCH AND TECHNOLOGY, 53,2018.
【25】栾彩娜.Structural, photoelectrical and photoluminescence properties of Ta-doped SnO2 monocrystal films grown on MgF2 (110) substratesCeramics International,2019.
【26】栾彩娜.UV–vis transparent conducting Ta-doped SnO2 epitaxial films grown by metal-organic chemical vapor depositionMaterials Research Bulletin:110488,2019.
【27】栾彩娜.CuInO2 epitaxial thin films on epi-GaN wafer: Fabrication and solar-blind photodetectorAPPLIED SURFACE SCIENCE:154505,2022.
【28】张彪.Structural and optical properties of single crystal Zn2TiO4 films prepared on MgO (110) substrates. Ceramics International, 48:4312,2022.
【29】王迪.Effect of epitaxial growth rate on morphological, structural and optical properties of beta-Ga2O3 films prepared by MOCVD. Materials Research Bulletin, 149,2022.
【30】栾彩娜.Preparation and Characterization of High Mobility Nb-Doped SnO2 Transparent Conducting FilmsMaterials Science Forum:869,2020.
【31】肖洪地.Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an exampleJOURNAL OF ALLOYS AND COMPOUNDS :162069,2021.
【32】刘杰.Eu-doped Lu2O3 epitaxial films with an embedded nanoporous GaN distributed Bragg reflectors. CERAMICS INTERNATIONAL Journal, 47:22693,2021.
【33】乐永.Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substrates. MATERIALS LETTERS Journal, 302,2021.
【34】栾彩娜.Structural and electrical properties of epitaxial SnO2: Sb films deposited on 6 H-SiC by MOCVD. Journal of Materials Science: Materials in Electronics, 32:21798,2021.
【35】乐永.Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substrates. MATERIALS LETTERS Journal, 302,2021.
【36】赵冲冲.Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror. VACUUM Journal, 182,2020.
【37】王迪.Characterization of single crystal beta-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD. CERAMICS INTERNATIONAL Journal, 46:4568,2020.
【38】何林安.Preparation and characterization of heteroepitaxial Zn2SnO4 single crystalline films prepared on MgO (100) substrates. JOURNAL OF THE AMERICAN CERAMIC SOCIETY Journal, 103:2555,2020.
【39】王迪.Effect of Ta doping on the properties of beta-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates. Journal of Materials Science: Materials in Electronics, 32:2757,2021.
【40】马瑾.Epitaxial growth of SnO2 films on 6H-SiC (0 0 0 1) by MOCVD. Materials Research Bulletin, 47:253,2012.
【41】马瑾.Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substrates. Thin Solid Films, 520:4270,2012.
【42】马瑾.Characterization of b-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique. Vacuum, 86:1850,2012.
【43】马瑾.Epitaxial growth of Ga2O3 thin films on MgO(110) substrate by metal–organic chemical vaporde position. Journal of crystal growth, 354:93,2012.
【44】马瑾.Characterization of b-Ga2O3 epitaxial films grown on MgO(111) substrates by metal-organic chemical vapor deposition. Materials letters, 87 :109,2012.
【45】毛宏志, 栾彩娜, 刘建强, 马瑾, 肖洪地 and 杨小坤.Lift-Off Mechanism of GaN Thin Films with Buried Nanocavities Investigated by SEM and TEM. Journal of ELECTRONIC MATERIALS, 48:3036,2019.
【46】肖洪地, 栾彩娜, 庞智勇, 刘建强, 马瑾 and 杨小坤.Large-area, liftoff nanoporous GaN distributed Bragg reflectors: Fabrication and application. Applied surface science, 489:849,2019.
【47】栾彩娜, 刘建强, 马瑾, 肖洪地 and 赵冲冲.Fabrication and properties of wafer-scale nanoporous GaN distributed Bragg reflectors with strong phase-separated InGaN/GaN layers. JOURNAL OF ALLOYS AND COMPOUNDS , 789:658,2019.
【48】栾彩娜, 冯先进, 肖洪地, 马瑾 and 何林安.UV-vis transparent conducting Ta-doped SnO2 epitaxial films grown by metal-organic chemical vapor deposition. Materials Research Bulletin, 118,2019.
【49】马瑾, 张锡健, 栾彩娜, 冯先进, 宋爱民 and 刘晓辉.Cu2O epitaxial films with domain structures prepared on Y-stabilized ZrO2 substrates by pulsed laser deposition. Ceramics International, 43:15500,2017.
【50】刘建强, 栾彩娜, 冀子武, 肖洪地 and 崔积适.Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers . Applied Physics Letters, 100:213101,2012.
【51】肖洪地, 栾彩娜, 刘建强 and 马瑾.Fabrication and properties of wafer-scale nanoporous GaN distributed Bragg reflectors with strong phase-separated InGaN/GaN layers. JOURNAL OF ALLOYS AND COMPOUNDS , 789:658,2019.
【52】肖洪地, 毛宏志, 栾彩娜, 刘建强 and 马瑾.Lift-Off Mechanism of GaN Thin Films with Buried Nanocavities Investigated by SEM and TEM. Journal of Electronic Materials , 48:3036,2019.
【53】冯先进, 栾彩娜, 马瑾 and 赵伟.Structural, electrical and optical properties of epitaxial Ta-doped titania films by MOCVD. CrystEngComm, 20:5395,2018.
【54】栾彩娜, 冯先进, 马瑾 and 何林安.Characterization of Rutile SnO2 Epitaxial Films Grown on MgF2 (001) Substrates by MOCVD. Crystal Research and Technology, 53,2018.
【55】冯先进, 栾彩娜, 马瑾 and 王伟广.Effect of Nb doping on structural and electrical properties of homoepitaxial rutile TiO2:Nb films. Ceramics International, 44:2432,2018.
【56】栾彩娜, 冯先进, 马瑾 and 赵伟.Characterization of niobium-doped titania epitaxial films deposited by metalorganic chemical vapor deposition. Materials Characterization, 137:263,2018.
【57】冯先进, 栾彩娜, 马瑾 and 何林安.Structural, optical and electrical properties of epitaxial rutile SnO2 films grown on MgF2 (110) substrates by MOCVD. Ceramics International, 44:869,2018.
【58】马瑾 and 栾彩娜.Characterization of tunable band gap aluminum indium oxide films prepared on SiO2 (0001) by MOCVDJournal of Materials Science: Materials in Electronics,2016.
【59】马瑾, 冯先进 and 栾彩娜.Characterization of single crystalline a-TiO2 films on MgAl2O4(100) substrates by MOCVDCeramics International,2016.
【60】栾彩娜, 冯先进, 肖洪地, 马瑾 and 何林安.Effect of niobium doping on the structural, electrical and optical properties of epitaxial SnO2 films on MgF2 (110) substrates by MOCVD. JOURNAL OF ALLOYS AND COMPOUNDS, 741:677,2018.
【61】冯先进, 栾彩娜, 马瑾 and 王伟广.Effects of deposition temperature on the structural and optical properties of single crystalline rutile TiO2 films. Materials Chemistry and Physics, 211:172,2018.
【62】冯先进, 栾彩娜, 马瑾 and 赵伟.Preparation and characterization of transparent indium- doped TiO2 films deposited by MOCVD. Ceramics International, 43:8391,2017.
【63】肖洪地, 栾彩娜, 毛宏志, 刘建强, 刘向东 and 曹得重.Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers. NANOSCALE, 9:11504,2017.
【64】冯先进, 栾彩娜, 马瑾 and 徐海胜.Synthesis and characterization of structural and optical properties of single crystalline a-TiO2 films on MgAl2O4(111) substrate. 1ST INTERNATIONAL CONFERENCE ON NEW MATERIAL AND CHEMICAL INDUSTRY (NMCI2016), 167,2017.
【65】冯先进, 栾彩娜, 肖洪地, 马瑾 and 赵伟.Heteroepitaxial growth and characterization of monocrystal anatase TiO2 films on epi-GaN (0001)/sapphire substrates. journal of materials science, 52:1082,2017.
【66】马瑾, 张锡健, 栾彩娜, 冯先进, 宋爱民 and 刘晓辉.Cu2O epitaxial films with domain structures prepared on Y-stabilized ZrO2 substrates by pulsed laser deposition. Ceramics International, 43:15500,2017.
【67】刘建强, 肖洪地, 栾彩娜, 冀子武 and 崔积适.Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers . Applied Physics Letters, 100:213101,2012.
【68】马瑾 and 栾彩娜.Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate. Surface Science, 605:977,2011.
【69】马瑾 and 栾彩娜.Structural and optical properties of Ga2(1-x)In2xO3 films prepared on alpha-Al2O3 (0001) by MOCVD. Applied surface science, 255:4401,2009.
【70】马瑾 and 栾彩娜.Synthesis of monoclinic structure gallium oxide epitaxial film on MgAl6O10 (100)Materials letters,2013.
【71】马瑾 and 栾彩娜.Structural and optical properties of Ga2O3:In films deposited on MgO(100) substrates by MOCVD. journal of solid state chemistry, 184:1946,2011.
【72】马瑾 and 栾彩娜.Heteroepitaxy of SnO2 thin filmson m-plane sapphire by MOCVD. Journal of crystal growth, 324:98,2011.
【73】马瑾, 冯先进 and 栾彩娜.Preparation and characterization of single crystalline anatase TiO2 epitaxial films on LaAlO3(001) substrates by metal organic chemicalSCRIPTA MATERIALIA,2016.
【74】马瑾, 栾彩娜 and 冯先进.Structure and Optical Properties of Epitaxial Indium Oxide Films Deposited on Y-Stabilized ZrO2 (111) by MOCVDJournal of ELECTRONIC MATERIALS,2015.
【75】栾彩娜 and 马瑾.Effect of Sb doping on structural, electrical and optical properties of epitaxial SnO2 films grown on r-cut sapphire. JOURNAL OF ALLOYS AND COMPOUNDS , 586:426,2014.
【76】马瑾 and 栾彩娜.Characterizationofhomoepitaxial β-Ga2O3 films prepared by metal–organic chemical vapor deposition. Journal of crystal growth, 404:75,2014.
【77】冯先进, 罗毅 and 栾彩娜.Effect of annealing on the structural and UV photoluminescence properties of Sb-doped SnO2 films deposited on Al2O3 (0001) substrates by RF magnetron sputtering. Optical Engineering, 53:117111,2014.
【78】马瑾 and 栾彩娜.Ultraviolet–green photoluminescence of β-Ga2O3 films deposited on MgAl6O10 (1 0 0) substrateOptical Materials,2013.
【79】马瑾, 栾彩娜 and 冯先进.Structural and optical properties of Al2xIn22xO3 films prepared by metal-organic chemical vapor deposition . RSC advances, 4,2014.
【80】栾彩娜 and 马瑾.Structural and electrical properties of SnO2 films grown on r-cut sapphire at different substrate temperature by MOCVD. VACUUM, 99:110,2014.
【81】马瑾, 栾彩娜 and 肖洪地.Electrical and optical characterizations of b-Ga2O3:Sn films deposited on MgO (110) substrate by MOCVDRSC advances,2014.
【82】马瑾, 栾彩娜 and 肖洪地.Structural and opticalproperties of β-Ga2O3 films deposited on MgAl2O4 (1 00) substrates by metal–organic chemical vapor deposition . Journal of Luminescence, 146:1,2014.
【83】栾彩娜, 马瑾 and 于新好.Synthesis and properties of epitaxial SnO2 films deposited on MgO (100) by MOCVD. VACUUM, 86:1333,2012.
【84】栾彩娜 and 马瑾.Sol-gel synthesis and characterization of BaAl2O4 and Co: BaAl2O4 nanoparticles. Advanced Materials research, 148-149:1067,2011.
【85】肖洪地, 刘建强, 栾彩娜, 冀子武 and 裴海燕.Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal-organic chemical vapor deposition. JOURNAL OF ALLOYS AND COMPOUNDS, 563:72,2013.
【86】马瑾, 栾彩娜 and 冯先进.Preparation and characterization of single crystalline In2O3 films deposited on MgO(110) substrates by MOCVD. Ceramics International, 40,2014.
【87】马瑾 and 栾彩娜.Structure and photoluminescence properties of epitaxial SnO2 films grown on alpha-Al2O3 (012) by MOCVD. Journal of Luminescence, 131:88,2011.
【88】马瑾 and 栾彩娜.Epitaxial relationships and optical properties of SnO2 films deposited on sapphire substrates. Applied surface science, 257:2516,2011.
【89】马瑾 and 栾彩娜.Structural and optical properties of single crystalline columbite tin oxide film. Applied physics letters, 98:261904-1,2011.
【90】栾彩娜, 冯先进, 肖洪地, 马瑾 and 何林安.Structural, photoelectrical and photoluminescence properties of Ta-doped SnO2 monocrystal films grown on MgF2 (110) substrates. CERAMICS INTERNATIONAL Journal, 45:10196,2019.
【91】肖洪地, 栾彩娜, 马瑾, 林兆军, 宗福建 and 张锡健.采用射频磁控溅射法在Si (111) 衬底上生长β-Ga2O3 薄膜. 《功能材料》, v 37:1,2006.
【92】冯先进, 肖洪地, 栾彩娜, 马瑾 and 赵伟.Deposition and characterization of epitaxial Ta-doped TiO2 films for ultraviolet photoelectric detectors. Ceramics International, 44:21114,2018.
【93】马瑾, 栾彩娜 and 冯先进.Preparation and characterization of Al2xIn22xO3 films deposited on MgO (10 0) by MOCVDMaterials Research Bulletin,2015.
【94】马瑾, 冯先进, 肖洪地 and 栾彩娜.Structural and optical properties of anatase TiO2 heteroepitaxial films prepared by MOCVDJournal of crystal growth,2016.
【95】栾彩娜, 韩琳, 冯先进 and 徐伟东.High Performance Thin Film Transistors With Sputtered In-Al-Zn-O Channel and Different Source/Drain Electrodes. IEEE Electron Device Letters, 40:247,2019.
【96】栾彩娜, 马瑾, 肖洪地 and 曹得重.Fabrication and properties of high quality InGaN-based LEDs with highly reflective nanoporous GaN mirrors. Photonics research, 6:1144,2018.
【97】栾彩娜 and 马瑾.Preparation and characterization of single crystalline SnO2 films deposited on TiO2(0 0 1) by MOCVD. Journal of crystal growth, 318:599,2011.
【98】栾彩娜, 刘建强, 马瑾 and 肖洪地.Fabrication and properties of wafer-scale nanoporous GaN distributed Bragg reflectors with strong phase-separated InGaN/GaN layers. Journal of Alloys and Compounds, 789:658,2019.
【99】毛宏志, 栾彩娜, 刘建强, 马瑾 and 肖洪地.Lift-Off Mechanism of GaN Thin Films with Buried Nanocavities Investigated by SEM and TEM. Journal of Electronic Materials , 48:3036,2019.
【100】栾彩娜 and 马瑾.Characterization of tunable band gap aluminum indium oxide films prepared on SiO2 (0001) by MOCVDJournal of Materials Science: Materials in Electronics,2016.
【101】栾彩娜 and 马瑾.Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate. Surface Science, 605:977,2011.
【102】栾彩娜 and 马瑾.Structural and optical properties of Ga2(1-x)In2xO3 films prepared on alpha-Al2O3 (0001) by MOCVD. Applied surface science, 255:4401,2009.
【103】栾彩娜 and 马瑾.Synthesis of monoclinic structure gallium oxide epitaxial film on MgAl6O10 (100)Materials letters,2013.
【104】栾彩娜 and 马瑾.Structural and optical properties of Ga2O3:In films deposited on MgO(100) substrates by MOCVD. journal of solid state chemistry, 184:1946,2011.
【105】栾彩娜 and 马瑾.Heteroepitaxy of SnO2 thin filmson m-plane sapphire by MOCVD. Journal of crystal growth, 324:98,2011.
【106】栾彩娜, 冯先进 and 马瑾.Structure and Optical Properties of Epitaxial Indium Oxide Films Deposited on Y-Stabilized ZrO2 (111) by MOCVDJournal of ELECTRONIC MATERIALS,2015.
【107】栾彩娜 and 马瑾.Characterizationofhomoepitaxial β-Ga2O3 films prepared by metal–organic chemical vapor deposition. Journal of crystal growth, 404:75,2014.
【108】罗毅, 栾彩娜 and 冯先进.Effect of annealing on the structural and UV photoluminescence properties of Sb-doped SnO2 films deposited on Al2O3 (0001) substrates by RF magnetron sputtering. Optical Engineering, 53:117111,2014.
【109】栾彩娜 and 马瑾.Ultraviolet–green photoluminescence of β-Ga2O3 films deposited on MgAl6O10 (1 0 0) substrateOptical Materials,2013.
【110】栾彩娜, 肖洪地 and 马瑾.Structural and opticalproperties of β-Ga2O3 films deposited on MgAl2O4 (1 00) substrates by metal–organic chemical vapor deposition . Journal of Luminescence, 146:1,2014.
【111】栾彩娜 and 马瑾.Structure and photoluminescence properties of epitaxial SnO2 films grown on alpha-Al2O3 (012) by MOCVD. Journal of Luminescence, 131:88,2011.
【112】栾彩娜 and 马瑾.Epitaxial relationships and optical properties of SnO2 films deposited on sapphire substrates. Applied surface science, 257:2516,2011.
【113】栾彩娜 and 马瑾.Structural and optical properties of single crystalline columbite tin oxide film. Applied physics letters, 98:261904-1,2011.
【114】栾彩娜, 马瑾, 林兆军, 宗福建, 张锡健 and 肖洪地.采用射频磁控溅射法在Si (111) 衬底上生长β-Ga2O3 薄膜. 《功能材料》, v 37:1,2006.
【115】栾彩娜, 冯先进 and 马瑾.Preparation and characterization of Al2xIn22xO3 films deposited on MgO (10 0) by MOCVDMaterials Research Bulletin,2015.
【116】马瑾, 张锡健, 栾彩娜, 冯先进, 宋爱民 and 刘晓辉.Cu2O epitaxial films with domain structures prepared on Y-stabilized ZrO2 substrates by pulsed laser deposition. Ceramics International, 43:15500,2017.
【117】栾彩娜, 韩琳, 冯先进 and 徐伟东.High Performance Thin Film Transistors With Sputtered In-Al-Zn-O Channel and Different Source/Drain Electrodes. IEEE Electron Device Letters, 40:247,2019.
【118】栾彩娜, 冯先进, 肖洪地, 马瑾 and 何林安.Structural, photoelectrical and photoluminescence properties of Ta-doped SnO2 monocrystal films grown on MgF2 (110) substrates. CERAMICS INTERNATIONAL Journal, 45:10196,2019.
【119】毛宏志, 栾彩娜, 刘建强, 马瑾 and 肖洪地.Lift-Off Mechanism of GaN Thin Films with Buried Nanocavities Investigated by SEM and TEM. Journal of Electronic Materials , 48:3036,2019.
【120】栾彩娜, 刘建强, 马瑾 and 肖洪地.Fabrication and properties of wafer-scale nanoporous GaN distributed Bragg reflectors with strong phase-separated InGaN/GaN layers. Journal of Alloys and Compounds, 789:658,2019.
【121】冯先进, 栾彩娜 and 马瑾.Characterization of single crystalline a-TiO2 films on MgAl2O4(100) substrates by MOCVDCeramics International,2016.
【122】冯先进, 栾彩娜 and 马瑾.Preparation and characterization of single crystalline anatase TiO2 epitaxial films on LaAlO3(001) substrates by metal organic chemicalSCRIPTA MATERIALIA,2016.
【123】冯先进, 肖洪地, 栾彩娜 and 马瑾.Structural and optical properties of anatase TiO2 heteroepitaxial films prepared by MOCVDJournal of crystal growth,2016.
【124】栾彩娜 and 马瑾.Characterization of tunable band gap aluminum indium oxide films prepared on SiO2 (0001) by MOCVDJournal of Materials Science: Materials in Electronics,2016.
【125】栾彩娜, 冯先进 and 马瑾.Structure and Optical Properties of Epitaxial Indium Oxide Films Deposited on Y-Stabilized ZrO2 (111) by MOCVDJournal of ELECTRONIC MATERIALS,2015.
【126】栾彩娜, 冯先进 and 马瑾.Preparation and characterization of Al2xIn22xO3 films deposited on MgO (10 0) by MOCVDMaterials Research Bulletin,2015.
【127】马瑾, 林兆军, 宗福建, 张锡健, 栾彩娜 and 肖洪地.采用射频磁控溅射法在Si (111) 衬底上生长β-Ga2O3 薄膜. 《功能材料》, v 37:1,2006.
【128】肖洪地, 栾彩娜, 冀子武, 刘建强 and 崔积适.Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers 100:213101,2012.
【129】栾彩娜, 冯先进 and 马瑾.Structural and optical properties of Al2xIn2 2xO3 films prepared by metal-organic chemical vapor deposition . RSC advances, 4,2014.
【130】冯先进, 栾彩娜, 马瑾 and 赵伟.Preparation and characterization of transparent indium- doped TiO2 films deposited by MOCVD. Ceramics International, 43:8391,2017.
【131】栾彩娜, 冯先进 and 马瑾.Preparation and characterization of single crystalline In2O3 films deposited on MgO(110) substrates by MOCVD. Ceramics International, 40,2014.
【132】冯先进, 栾彩娜, 马瑾 and 王伟广.Effects of deposition temperature on the structural and optical properties of single crystalline rutile TiO2 films. Materials Chemistry and Physics, 211:172,2018.
【133】肖洪地, 栾彩娜, 毛宏志, 刘建强, 刘向东 and 曹得重.Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers. NANOSCALE, 9:11504,2017.
【134】冯先进, 肖洪地, 栾彩娜, 马瑾 and 赵伟.Deposition and characterization of epitaxial Ta-doped TiO2 films for ultraviolet photoelectric detectors. Ceramics International, 44:21114,2018.
【135】栾彩娜, 马瑾, 肖洪地 and 曹得重.Fabrication and properties of high quality InGaN-based LEDs with highly reflective nanoporous GaN mirrors. Photonics research, 6:1144,2018.
【136】栾彩娜 and 马瑾.Characterizationofhomoepitaxial β-Ga2O3 films prepared by metal–organic chemical vapor deposition. Journal of crystal growth, 404:75,2014.
【137】栾彩娜, 肖洪地 and 马瑾.Electrical and optical characterizations of b-Ga2O3:Sn films deposited on MgO (110) substrate by MOCVDRSC advances,2014.
【138】刘建强, 栾彩娜, 冀子武, 裴海燕 and 肖洪地.Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal-organic chemical vapor deposition. JOURNAL OF ALLOYS AND COMPOUNDS, 563:72,2013.
【139】冯先进, 栾彩娜, 马瑾 and 何林安.Structural, optical and electrical properties of epitaxial rutile SnO2 films grown on MgF2 (110) substrates by MOCVD. Ceramics International, 44:869,2018.
【140】冯先进, 栾彩娜, 马瑾 and 赵伟.Structural, electrical and optical properties of epitaxial Ta-doped titania films by MOCVD. CrystEngComm, 20:5395,2018.
【141】栾彩娜 and 马瑾.Structural and optical properties of Ga2O3:In films deposited on MgO(100) substrates by MOCVD. journal of solid state chemistry, 184:1946,2011.
【142】栾彩娜 and 马瑾.Structural and optical properties of single crystalline columbite tin oxide film. Applied physics letters, 98:261904-1,2011.
【143】栾彩娜 and 马瑾.Heteroepitaxy of SnO2 thin filmson m-plane sapphire by MOCVD. Journal of crystal growth, 324:98,2011.
【144】栾彩娜 and 马瑾.Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate. Surface Science, 605:977,2011.
【145】栾彩娜 and 马瑾.Epitaxial relationships and optical properties of SnO2 films deposited on sapphire substrates. Applied surface science, 257:2516,2011.
【146】栾彩娜 and 马瑾.Structure and photoluminescence properties of epitaxial SnO2 films grown on alpha-Al2O3 (012) by MOCVD. Journal of Luminescence, 131:88,2011.
【147】栾彩娜 and 马瑾.Structural and optical properties of Ga2(1-x)In2xO3 films prepared on alpha-Al2O3 (0001) by MOCVD. Applied surface science, 255:4401,2009.
【148】罗毅, 栾彩娜 and 冯先进.Effect of annealing on the structural and UV photoluminescence properties of Sb-doped SnO2 films deposited on Al2O3 (0001) substrates by RF magnetron sputtering. Optical Engineering, 53:117111,2014.
【149】栾彩娜, 肖洪地 and 马瑾.Structural and opticalproperties of β-Ga2O3 films deposited on MgAl2O4 (1 00) substrates by metal–organic chemical vapor deposition . Journal of Luminescence, 146:1,2014.
【150】栾彩娜 and 马瑾.Synthesis of monoclinic structure gallium oxide epitaxial film on MgAl6O10 (100)Materials letters,2013.
【151】栾彩娜 and 马瑾.Ultraviolet–green photoluminescence of β-Ga2O3 films deposited on MgAl6O10 (1 0 0) substrateOptical Materials,2013.
【152】冯先进, 栾彩娜, 马瑾 and 徐海胜.Synthesis and characterization of structural and optical properties of single crystalline a-TiO2 films on MgAl2O4(111) substrate. 1ST INTERNATIONAL CONFERENCE ON NEW MATERIAL AND CHEMICAL INDUSTRY (NMCI2016), 167,2017.
【153】冯先进, 栾彩娜, 肖洪地, 马瑾 and 赵伟.Heteroepitaxial growth and characterization of monocrystal anatase TiO2 films on epi-GaN (0001)/sapphire substrates. journal of materials science, 52:1082,2017.
【154】冯先进, 栾彩娜, 马瑾 and 王伟广.Effect of Nb doping on structural and electrical properties of homoepitaxial rutile TiO2:Nb films. Ceramics International, 44:2432,2018.
【155】栾彩娜, 冯先进, 马瑾 and 赵伟.Characterization of niobium-doped titania epitaxial films deposited by metalorganic chemical vapor deposition. Materials Characterization, 137:263,2018.
【156】栾彩娜, 冯先进, 马瑾 and 何林安.Characterization of Rutile SnO2 Epitaxial Films Grown on MgF2 (001) Substrates by MOCVD. Crystal Research and Technology, 53,2018.
【157】栾彩娜, 冯先进, 肖洪地, 马瑾 and 何林安.Effect of niobium doping on the structural, electrical and optical properties of epitaxial SnO2 films on MgF2 (110) substrates by MOCVD. JOURNAL OF ALLOYS AND COMPOUNDS, 741:677,2018.
【158】马瑾 and 栾彩娜.Effect of Sb doping on structural, electrical and optical properties of epitaxial SnO2 films grown on r-cut sapphire. JOURNAL OF ALLOYS AND COMPOUNDS, 586:426,2014.
【159】马瑾 and 栾彩娜.Structural and electrical properties of SnO2 films grown on r-cut sapphire at different substrate temperature by MOCVD. Vacuum, 99:110,2014.
【160】马瑾 and 栾彩娜.Sol-gel synthesis and characterization of BaAl2O4 and Co: BaAl2O4 nanoparticles. Advanced Materials research, 148-149:1067,2011.
【161】马瑾, 于新好 and 栾彩娜.Synthesis and properties of epitaxial SnO2 films deposited on MgO (100) by MOCVD. Vacuum, 86:1333,2012.
【162】马瑾 and 栾彩娜.Preparation and characterization of single crystalline SnO2 films deposited on TiO2(0 0 1) by MOCVD. Journal of crystal growth, 318:599,2011.
| 专利名称 | 简介 | 日期 |
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2022/07/19 |
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一种高质量锡酸锌单晶薄膜及其制备方法 |
2020/11/27 |
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一种正钛酸锌单晶薄膜及其制备方法 |
2022/08/09 |
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2009/12/30 |
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一种氧化铟单晶外延薄膜的制备方法 |
2012/02/01 |
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一种带隙宽度可调的铝铟氧化物薄膜材料及其制备方法 |
2016/04/06 |
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一种在氧化镁衬底上制备单斜晶型氧化镓单晶薄膜的方法 |
2012/02/01 |
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一种在钇掺杂氧化锆衬底上制备立方结构氧化铟单晶薄膜的方法 |
2011/06/01 |
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一种高迁移率铌掺杂氧化锡单晶薄膜的制备方法 |
2019/10/01 |
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一种正交结构氧化锡单晶薄膜的制备方法 |
