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Effect of Ta doping on the properties of beta-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates
Affiliation of Author(s):集成电路学院
Journal:Journal of Materials Science: Materials in Electronics
First Author:王迪
Document Code:B219DC80D7834A9FA49D4957ED10C84F
Volume:32
Issue:3
Page Number:2757
Number of Words:5
Translation or Not:no
Date of Publication:2021-02-01