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Effect of Ta doping on the properties of beta-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates

Release time:2021-05-28
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Affiliation of Author(s):
集成电路学院
Journal:
Journal of Materials Science: Materials in Electronics
First Author:
王迪
Document Code:
B219DC80D7834A9FA49D4957ED10C84F
Volume:
32
Issue:
3
Page Number:
2757
Number of Words:
5
Translation or Not:
no
Date of Publication:
2021-02-01