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Structural and electrical properties of epitaxial SnO2: Sb films deposited on 6 H-SiC by MOCVD
Affiliation of Author(s):微电子学院
Journal:Journal of Materials Science: Materials in Electronics
First Author:栾彩娜
Indexed by:Unit Twenty Basic Research
Document Code:062581828EBA4033A88622C46DF3939D
Volume:32
Issue:16
Page Number:21798
Translation or Not:no
Date of Publication:2021-08-01