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Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example

Release time:2024-01-09
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Affiliation of Author(s):
集成电路学院
Journal:
JOURNAL OF ALLOYS AND COMPOUNDS
Key Words:
electrochemical etching;Lu2O3:Eu film;nanoporous GaN array;PL intensity;PLD
First Author:
刘杰
Document Code:
1478208142180356098
Volume:
892
Number of Words:
4
Translation or Not:
no
Date of Publication:
2022-02-05