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Fabrication, properties, and photodetector of β-(AlxGa1-x)2O3/GaN heteroepitaxial films grown by MOCVD

Release time:2025-01-11
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Affiliation of Author(s):
集成电路学院
Journal:
Ceramics International
First Author:
陈蓉蓉
Document Code:
1747174632788680706
Volume:
50
Issue:
6
Page Number:
9363-9371
Number of Words:
4000
Translation or Not:
no
Date of Publication:
2024-01-01