Fabrication, properties, and photodetector of β-(AlxGa1-x)2O3/GaN heteroepitaxial films grown by MOCVD
Release Time:2025-01-11
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- Institution:
- 集成电路学院
- Title of Paper:
- Fabrication, properties, and photodetector of β-(AlxGa1-x)2O3/GaN heteroepitaxial films grown by MOCVD
- Journal:
- Ceramics International
- First Author:
- 陈蓉蓉
- Document Code:
- 1747174632788680706
- Volume:
- 50
- Issue:
- 6
- Page Number:
- 9363-9371
- Number of Words:
- 4000
- Translation or Not:
- No
- Date of Publication:
- 2024-01
- Release Time:
- 2025-01-11