High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctions
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所属单位:集成电路学院
发表刊物:VACUUM
论文编号:FEF77AD6CC35467AB10E6D0389F35D66
期号:215
字数:3
是否译文:否
发表时间:2023-06-17
发表时间:2023-06-17
High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctions
点击次数:
所属单位:集成电路学院
发表刊物:VACUUM
论文编号:FEF77AD6CC35467AB10E6D0389F35D66
期号:215
字数:3
是否译文:否
发表时间:2023-06-17
发表时间:2023-06-17