Paper Publications
Title of Award : High crystal quality β-Ga2O3 epitaxial films grown on porous n-GaN substrates
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Institution:集成电路学院
Title of Paper:High crystal quality β-Ga2O3 epitaxial films grown on porous n-GaN substrates
Journal:Materials Science in Semiconductor Processing
First Author:陈蓉蓉
Document Code:6E9E1B6ECCDA49DFBD33446AD41152BE
Issue:168
Page Number:107859
Number of Words:4
Translation or Not:No
Date of Publication:2023-11
Release Time:2024-01-10