Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
Release time:2019-04-14
Hits:
- Affiliation of Author(s):
- 物理学院
- Journal:
- Nanoscale research letters
- All the Authors:
- Meng lingguo
- First Author:
- linzhaojun
- Indexed by:
- Unit Twenty Basic Research
- Document Code:
- lw-137944
- Volume:
- 7
- Page Number:
- 434
- Translation or Not:
- no
- Date of Publication:
- 2012-08-03