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E-Mail: myyanghua@163.com
孟令国，男，1978 年2 月生，副教授。曾主持和参与科研项目10余项，共发表学术期刊论文20余篇，其中SCI检索10 余篇。已授权国家发明专利10余项，省级科技发明二等奖3项。教学主要集中在电路专业课程与创新创业课程两个领域，获得山东省教学成果特等奖1项，国家教学成果奖二等奖1项。多次参与组织全国大学生数学建模竞赛、全国大学生电子设计竞赛、iCAN国际大学生创新创业大赛、山东省物联网创造力大赛、山东省单片机应用设计大赛。
山东大学集成电路学院 , 集成电路设计研究室 , 无 , 副教授
山东大学物理学院
西安交通大学 , 电信学院电子系 , 硕博
山东旅科集团
山东大学 , 电子系 , 本科
| Undergraduate Course Name | Semester | Credit | Course Number |
|---|---|---|---|
|
专创融合创业基础课（齐鲁创业） |
Spring Term |
2.0 |
sd04010080 |
|
集成电路原理与设计 |
Autumn Term |
3.0 |
0230081 |
|
集成电路设计基础 |
Spring Term |
3.0 |
0230047 |
|
嵌入式系统原理与应用 |
Spring Term |
2.5 |
sd04030680 |
|
电子训练与创新制作（实训） |
Autumn Term |
1.0 |
sd04031320 |
|
导航通信监视系统-时空软件创新实践 |
Autumn Term |
1.0 |
0990026 |
|
研究性学习与创新 |
Autumn Term |
1.0 |
0990016 |
|
创业英语 |
Autumn Term |
1.0 |
0990013 |
|
专创融合的创业实践（信息类） |
Autumn Term |
1.0 |
0990010 |
|
专创融合创业基础 |
Autumn Term |
1.0 |
0990002 |
|
半导体器件设计与仿真 |
Autumn Term |
3.0 |
sd04030240 |
|
高级语言编程（双） |
Spring Term |
2.0 |
sd04030890 |
|
高级语言编程实验 |
Spring Term |
1.0 |
sd04030580 |
|
半导体器件设计与仿真 |
Spring Term |
3.0 |
sd04030240 |
|
微电子专业基础实验（I） |
Spring Term |
1.5 |
sd04030840 |
|
集成电路制造工艺 |
Autumn Term |
3.0 |
0230054 |
|
集成电路设计 |
3.0 |
sd01030460 |
| Name | Introduction |
|---|---|
|
基于RISC-V的高性能服务器CPU设计，基于RISC-V的嵌入式低功耗CPU设计，数字集成电路设计，微系统及物联网系统设计 |
基于RISC-V的高性能服务器CPU设计，基于RISC-V的嵌入式低功耗CPU设计，数字集成电路设计，微系统及物联网系统设计。 |
| Project Name | Project Cycle |
|---|---|
|
自主可控高性能服务器CPU的设计及产业化 |
2023/12/01,2026/12/31 |
|
山东省自主可控服务器CPU发展战略研究 |
2024/01/26,2024/12/31 |
|
RISC-V双核CPU设计 |
2023/03/10,2026/03/09 |
|
北斗精准时空信息融合应用与智能服务体系 |
2021/11/01,2024/10/31 |
|
多层次多模式的高校创新方法人才培育体系建设与示范 |
2017/10/01,2020/09/30 |
|
北斗卫星毫米级暴雨预警实时泄洪协同调控新技术及应用 |
2019/07/08,2021/12/31 |
|
RISC-V人工智能芯片设计与FPGA验证 |
2019/05/23,2022/06/30 |
|
利用纳米孔（柱）阵列同时提高LED内、外量子效率的研究 |
2015/01/01,2017/12/31 |
|
高质量n型氧化亚铜薄膜及其同质结太阳能电池的研究 |
2016/08/17,2019/12/31 |
|
局域氧空位分布及其对阻变存储器细丝导通机制的影响研究 |
2013/08/15,2017/12/31 |
|
钽掺杂氧化锡外延单晶薄膜的制备、结构及其光电性质的研究 |
2016/08/17,2019/12/31 |
|
基于能带工程/应力调控的高效InGaN基红光LED的研究 |
2016/08/17,2020/12/31 |
|
面向大厚度高效聚合物光伏器件的活性层形态结构和载流子复合的调控 |
2015/08/17,2019/12/31 |
|
基于层状双氢氧化物纳米复合材料的杂化太阳能电池的制备及性能研究 |
2013/08/15,2017/12/31 |
|
有机/无机纳米复合材料制备杂化太阳能电池材料的研究 |
2011/07/01,2014/07/01 |
|
出租车时空分布与出行规律大数据分析处理技术 |
2015/10/28,2016/10/27 |
|
济南市城市公共客运管理服务中心CZGK-2012-093系统实时路况软件 |
2012/11/01,2013/10/31 |
|
新型TAXI车联网智能顶灯协处理网关 |
2012/07/15,2012/09/15 |
|
PIC-MC并行集群计算仿真平台 |
2010/05/21,2010/12/31 |
|
共面电极微等离子体电流气压特性数值仿真与机理研究 |
2011/12/08,2015/12/31 |
| Award Time | Award Name |
|---|---|
|
2015 |
山东省科学技术奖 |
|
2007 |
山东省科学技术奖 |
|
山东省科学技术奖 |
【1】李玲.沟道层带尾态密度和厚度对 ａ － ＩＧＺＯ 薄膜晶体管 特性影响的数值仿真《微电子学与计算机》,2022.
【2】孟令国.Learning Attention-Aware Interactive Features for Fine-Grained Vegetable and Fruit Classification. Applied Sciences-Basel, 11,2021.
【3】Li Ling, Meng lingguo, Wang Fuxun, Wang Yong and 李玲.Synthesis and optical characterization of In3+-stabilized gamma-Bi2O3 sillenite semiconductor with cation deficiency. Materials Science in Semiconductor Processing, 68:48,2017.
【4】Meng lingguo and Xing Jianping.Simulations of Breakdown Voltage of Coplanar Electrodes Microplasma Devices. IEEE Transactions on plasma science, 41:12,2013.
【5】linzhaojun and Meng lingguo.A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics . Chinese Physics B, 21:097104,2012.
【6】jiangran, Meng lingguo and zhangxijian.Atomic layer deposition of an Al2O3 dielectric on ultrathin graphit by using electron beam irradiation. Journal of Semiconductors, 33:093004-1,2012.
【7】linzhaojun and Meng lingguo.Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts. Chinese Physic B, 20:047105-1,2011.
【8】linzhaojun and Meng lingguo.Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors . Nanoscale research letters, 7:434,2012.
【9】linzhaojun and Meng lingguo.Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors. Journal of applied physics, 112:054513,2012.
【10】linzhaojun and Meng lingguo.Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors . Applied physics letters, 101:113501,2012.
【11】Meng lingguo, linzhaojun and Xing Jianping.Multi-discharge phenomenon in coplanar electrodes microplasma devices. Eur. Phys. J. D, 60:575,2010.
【12】Meng lingguo, Xing Jianping and linzhaojun.Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon. APPLIED PHYSICS LETTERS, 96:191501,2010.
【13】linzhaojun and Meng lingguo.Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures. Journal of Semiconductors, 31:084007-1,2010.
【14】linzhaojun and Meng lingguo.Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts. Chinese Physics B, 20:097106 -1,2011.
【15】linzhaojun and Meng lingguo.Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics. Journal of applied physics, 109:074512-1,2011.
【16】linzhaojun and Meng lingguo.Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics. Applied physics letters, 99:123504,2011.
【17】linzhaojun and Meng lingguo.Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Applied physics letters, 98:123512-1,2011.
【18】Meng lingguo and linzhaojun.A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics . Chinese Physics B, 21:097104,2012.
【19】Meng lingguo, zhangxijian and jiangran.Atomic layer deposition of an Al2O3 dielectric on ultrathin graphit by using electron beam irradiation. Journal of Semiconductors, 33:093004-1,2012.
【20】Meng lingguo and linzhaojun.Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts. Chinese Physic B, 20:047105-1,2011.
【21】Meng lingguo and linzhaojun.Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors . Nanoscale research letters, 7:434,2012.
【22】Meng lingguo and linzhaojun.Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors. Journal of applied physics, 112:054513,2012.
【23】Meng lingguo and linzhaojun.Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors . Applied physics letters, 101:113501,2012.
【24】Meng lingguo and linzhaojun.Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures. Journal of Semiconductors, 31:084007-1,2010.
【25】Meng lingguo and linzhaojun.Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts. Chinese Physics B, 20:097106 -1,2011.
【26】Meng lingguo and linzhaojun.Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics. Journal of applied physics, 109:074512-1,2011.
【27】Meng lingguo and linzhaojun.Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics. Applied physics letters, 99:123504,2011.
【28】Meng lingguo and linzhaojun.Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Applied physics letters, 98:123512-1,2011.
【29】Meng lingguo and linzhaojun.Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures. Journal of Semiconductors, 31:084007-1,2010.
【30】Meng lingguo and linzhaojun.Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts. Chinese Physics B, 20:097106 -1,2011.
【31】Meng lingguo and linzhaojun.Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts. Chinese Physic B, 20:047105-1,2011.
【32】Meng lingguo and linzhaojun.Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics. Journal of applied physics, 109:074512-1,2011.
【33】Meng lingguo and linzhaojun.Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics. Applied physics letters, 99:123504,2011.
【34】Meng lingguo and linzhaojun.Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors. Applied physics letters, 98:123512-1,2011.
【35】Meng lingguo and linzhaojun.Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors . Applied physics letters, 101:113501,2012.
【36】Meng lingguo and linzhaojun.Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors . Nanoscale research letters, 7:434,2012.
【37】Meng lingguo and linzhaojun.Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors. Journal of applied physics, 112:054513,2012.
【38】Meng lingguo and linzhaojun.A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics . Chinese Physics B, 21:097104,2012.
【39】Meng lingguo, zhangxijian and jiangran.Atomic layer deposition of an Al2O3 dielectric on ultrathin graphit by using electron beam irradiation. Journal of Semiconductors, 33:093004-1,2012.
【40】Meng lingguo, Wang Fuxun, Wang Yong and 李玲.Synthesis and optical characterization of In3+-stabilized gamma-Bi2O3 sillenite semiconductor with cation deficiency. Materials Science in Semiconductor Processing, 68:48,2017.
【41】Xing Jianping and Meng lingguo.Simulations of Breakdown Voltage of Coplanar Electrodes Microplasma Devices. IEEE Transactions on plasma science, 41:12,2013.
【42】Xing Jianping, linzhaojun and Meng lingguo.Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon . Applied physics letters, 96:191501-1,2010.
【43】linzhaojun, Xing Jianping and Meng lingguo.Multi-discharge phenomenon in coplanar electrodes microplasma devices. Eur. Phys. J. D, 60:575,2010.
| Patent Name | Introduction | Date |
|---|---|---|
|
一种出租车智能可视和图像识别装置及工作方法 |
2015/11/18 |
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|
基于RFID/WSN精准公交到站队列导乘牌系统及工作方法 |
2015/08/05 |
|
|
一种Taxi分区服务智能监视装置及工作方法 |
2015/08/26 |
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一种基于出租车时空特征的态势分析方法 |
||
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一种殊域带状专网交通通信导航监视预警装置及工作方法 |
2017/02/01 |
|
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一种微型千兆以太网交换装置 |
||
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二维直印式无掩膜等离子体刻蚀阵列装置 |
||
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基于高架匝道口车牌识别高峰主动诱导工作装置及其工作方法 |
2013/12/19 |
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一种出租车智能可视和图像识别装置及工作方法 |
2013/06/27 |
|
|
基于RFID/WSN精准公交到站队列导乘牌系统及工作方法 |
2013/04/11 |
|
|
一种基于公交车GPS数据生成道路路网地图的方法 |
2015/04/08 |
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兼容北斗CORS公交精准定位系统及其工作方法 |
2015/05/14 |
|
|
一种殊域带状专网交通通信导航监视预警装置及工作方法 |
2015/04/30 |
|
|
可装配二维微等离子体阵列装置及其制备方法 |
2010/03/23 |
|
|
三维立体等离子体显示器件 |
2009/11/06 |
