Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-10-22
Hits:
- Institution:
- 物理学院
- Title of Paper:
- Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
- Journal:
- Applied physics letters
- First Author:
- 林兆军
- All the Authors:
- Meng lingguo
- Document Code:
- lw-137957
- Volume:
- 101
- Page Number:
- 113501
- Translation or Not:
- No
- Date of Publication:
- 2012-09
- Release Time:
- 2019-10-22