Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics
Release Time:2019-10-24
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- Institution:
- 物理学院
- Title of Paper:
- Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics
- Journal:
- APPLIED PHYSICS LETTERS
- First Author:
- 林兆军
- All the Authors:
- Meng lingguo,林兆军
- Document Code:
- lw-96700
- Volume:
- 99
- Issue:
- 12
- Page Number:
- 123504
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2011-09
- Release Time:
- 2019-10-24