Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures
Release Time:2019-10-24
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- Institution:
- 物理学院
- Title of Paper:
- Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures
- Journal:
- Journal of Semiconductors
- First Author:
- 林兆军
- All the Authors:
- Meng lingguo,林兆军
- Document Code:
- lw-96784
- Volume:
- 31
- Issue:
- 8
- Page Number:
- 084007-1
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2010-08
- Release Time:
- 2019-10-24