Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-10-24
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- Institution:
- 物理学院
- Title of Paper:
- Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
- Journal:
- Nanoscale research letters
- First Author:
- 林兆军
- All the Authors:
- Meng lingguo,林兆军
- Document Code:
- lw-137944
- Volume:
- 7
- Page Number:
- 434
- Number of Words:
- 3
- Translation or Not:
- No
- Date of Publication:
- 2012-08
- Release Time:
- 2019-10-24