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个人信息Personal Information
教授 博士生导师 硕士生导师
性别：男
毕业院校：山东大学
学历：研究生(博士)毕业
学位：博士生
在职信息：在职
所在单位：物理学院
入职时间：2018-10-09
办公地点：知新楼C1024
2024年论文
77. Xiaorong Zou, Yingxi Bai, Ying Dai*, Baibiao Huang, and Chengwang Niu*, Robust second-order topological insulator in 2D van der Waals magnet CrI3, Mater. Horiz. accepted (2024).
76. Xinming Wu, Zhiqi Chen, Yingxi Bai, Baibiao Huang, Ying Dai*, and Chengwang Niu*, Magnetic topological insulators with switchable edge and corner states in monolayer VSi2P4, Phys. Rev. B 109, 235407 (2024).
75. Runhan Li, Xiaorong Zou, Zhiqi Chen, Xiaoran Feng, Baibiao Huang, Ying Dai*, and Chengwang Niu*, Floquet engineering of orbital Hall effect and valleytronics in two-dimensional topological magnets, Mater. Horiz. 11, 3819 (2024). Selected as the Materials Horizons HOT Papers
74. Yingxi Bai, Lichuan Zhang,* Ning Mao, Runhan Li, Zhiqi Chen, Ying Dai,* Baibiao Huang, and Chengwang Niu*, Coupled electronic and magnonic topological states in two-dimensional ferromagnets, ACS Nano 18, 13377 (2024).
73. Xinqing Han, Runhan Li, Shangfa Pan, Yong Liu, Chengwang Niu,* Miguel L. Crespillo,* Eva Zarkadoula,* and Peng Liu*, Tailoring the electronic structures and spectral properties of ZnO with irradiation defects generated under intense electronic excitation: a combined experimental and DFT approach, Adv. Funct. Mater. DOI: 10.1002/adfm.202405885 (2024).
72. Zhiqi Chen, Runhan Li, Yingxi Bai, Ning Mao, Mahmoud Zeer, Dongwook Go, Ying Dai,* Baibiao Huang, Yuriy Mokrousov, and Chengwang Niu*, Topology-engineered orbital Hall effect in two-dimensional ferromagnets, Nano Lett. 24, 4826 (2024).
71. Xiaoran Feng, Runhan Li, Zhiqi Chen, Ying Dai*, Baibiao Huang, Chengwang Niu*, Manipulating corner states without topological phase transition in two-dimensional intrinsic triferroic materials, Phys. Rev. B 109, 165308 (2024).
70. Runhan Li, Xiaorong Zou, Yingxi Bai, Zhiqi Chen, Baibiao Huang, Ying Dai*, and Chengwang Niu*, Layer-coupled corner states in two-dimensional topological multiferroics, Mater. Horiz. 11, 2242 (2024).
69. Bo Yuan, Wenli Sun, Yingxi Bai, Zhiqi Chen, Baibiao Huang, Ying Dai*, and Chengwang Niu*, A mixed Weyl semimetal in a two-dimensional ferromagnetic BaCrSe2 monolayer, J. Mater. Chem. C 12, 296 (2024).
68. Xiaorong Zou, Runhan Li, Zhiqi Chen, Ying Dai,* Baibiao Huang, and Chengwang Niu*, Engineering gapless edge states from antiferromagnetic Chern homobilayer, Nano Lett. 24, 450 (2024).
2023年论文
67. Xinming Wu, Runhan Li, Xiaorong Zou, Baibiao Huang, Ying Dai,* and Chengwang Niu*, Robust quantum anomalous Hall effect with tunable magnetization directions and Chern numbers, Phys. Rev. B 108, 115438 (2023).
66. Runhan Li, Ning Mao, Linke Cai, Yingxi Bai, Baibiao Huang, Ying Dai*, and Chengwang Niu*, Ferroelectric heterobilayer with tunable first- and higher-order topological states, Phys. Rev. B 108, 125302 (2023).
65. Linke Cai, Runhan Li, Xinming Wu, Baibiao Huang, Ying Dai* and Chengwang Niu*, Second-order topological insulators and tunable topological phase transitions in honeycomb ferromagnets, Phys. Rev. B 107, 245116 (2023).
64. Wenli Sun, Bingyang Li, Xiaorong Zou, Runhan Li, Baibiao Huang, Ying Dai*, and Chengwang Niu*, Magnetic Weyl semimetal in BaCrSe2 with long-distance distribution of Weyl points, Adv. Sci. 10, 2301474 (2023).
63. Xiaoran Feng, Linke Cai, Zhiqi Chen, Ying Dai*, Baibiao Huang, and Chengwang Niu*. Tunable second-order topological insulators in Chern insulators 2H-FeX2 (X = Cl and Br), Appl. Phys. Lett. 122, 193104 (2023).
62. Runhan Li, Ning Mao, Xinming Wu, Baibiao Huang, Ying Dai,* and Chengwang Niu*. Robust Second-Order Topological Insulators with Giant Valley Polarization in Two-Dimensional Honeycomb Ferromagnets, Nano Lett. 23, 91 (2023).
61.Yingxi Bai, Ning Mao, Runhan Li, Ying Dai*, Baibiao Huang, and Chengwang Niu*. Engineering second-order corner states in two-dimensional multiferroics, Small 19, 2206574 (2023).
60. Ning Mao, Runhan Li, Xiaorong Zou, Ying Dai*, Baibiao Huang, and Chengwang Niu*. Ferroelectric higher-order topological insulator in two dimensions, Phys. Rev. B 107, 045125 (2023).
2022年论文
59. Ning Mao, Runhan Li, Ying Dai*, Baibiao Huang, Binghai Yan, and Chengwang Niu*. Orbital shift-induced boundary obstructed topological materials with a large energy gap, Adv. Sci. 9, 2202564 (2022).
58. Ning Mao, Hao Wang, Ying Dai*, Baibiao Huang, and Chengwang Niu*. Third-Order Topological Insulators with Unexpected Wallpaper Fermions in Tl4PbTe3 and Tl4SnTe3, npj Comput. Mater. 8, 154 (2022).
57. Xiaorong Zou, Hongkai Ma, Runhan Li, Ying Dai,* Baibiao Huang, and Chengwang Niu*. Gate-mediated transition between antiferromagnetic topological and Chern insulators in honeycomb X3MnN3 (X = Sr, Ba), Phys. Rev. B 106, 075144 (2022).
56. Yingxi Bai, Linke Cai, Ning Mao, Runhan Li, Ying Dai, * Baibiao Huang, and Chengwang Niu*. Doubled quantum spin Hall effect with high-spin Chern number in α-antimonene and α-bismuthene, Phys. Rev. B 105, 195142 (2022).
55. Yuanyuan Wang, Chengwang Niu, Baibiao Huang, Ying Dai*, and Wei Wei*. Valley-contrasting physics in a two-dimensional px,y-orbital honeycomb lattice, Phys. Rev. B 105, 075421 (2022).
54. Lukáš Nádvorník,* Oliver Gueckstock, Lukas Braun, Chengwang Niu, Joachim Gräfe, Gunther Richter, Gisela Schütz, Hidenori Takagi, Mahmoud Zeer, Tom S. Seifert, Peter Kubaščík, Avanindra K. Pandeya, Abdelmadjid Anane, Heejun Yang, Amilcar Bedoya-Pinto, Stuart S. P. Parkin, Martin Wolf, Yuriy Mokrousov, Hiroyuki Nakamura, and Tobias Kampfrath. Terahertz Spin-to-Charge Current Conversion in Stacks of Ferromagnets and the Transition-Metal Dichalcogenide NbSe2, Adv. Mater. Interfaces 2201675 (2022).
53. Hongkai Ma, Bingyang Li, Xiaorong Zou, Xiangting Hu, Ying Dai,* Baibiao Huang and Chengwang Niu*. Two-dimensional antiferromagnetic topological insulators in KCuSe/NaMnBi van der Waals heterobilayers, Phys. Chem. Chem. Phys. 24, 25036 (2022).
52. Wenli Sun, Xinying Li, Bingyang Li, Xiaorong Zou, Baibiao Huang, Ying Dai* and Chengwang Niu*. Switchable quantum anomalous Hall effect in a ferromagnetic topological crystalline insulating NpSb monolayer, J. Phys. D: Appl. Phys. 55, 305301 (2022).
51. BingyangLi, Wenli Sun, Xiaorong Zou, Xinying Li, Baibiao Huang, Ying Dai* and Chengwang Niu*. Switchable quantum anomalous and spin Hall effects in honeycomb magnet EuCd2As2, New J. Phys. 24, 053038 (2022).
2021年论文
50. Hao Wang, Ning Mao, Xiangting Hu, Ying Dai*, Baibiao Huang, and Chengwang Niu*. A magnetic topological insulator in two-dimensional EuCd2Bi2: giant gap with robust topology against magnetic transitions. Mater. Horiz. 8, 956 (2021).
49. Xinying Li, Ning Mao, Runhan Li, Ying Dai*, Baibiao Huang, and Chengwang Niu*. Engineering antiferromagnetic topological insulator in two-dimensional NaMnBi. J. Mater. Chem. C 9, 16952 (2021).
48. Runhan Li, Hao Wang, Ning Mao, Hongkai Ma, Baibiao Huang, Ying Dai*, and Chengwang Niu*. Engineering antiferromagnetic topological insulator by strain in two-dimensional rare-earth pnictide EuCd2Sb2. Appl. Phys. Lett. 119, 173105 (2021).
47. Xiaorong Zou, Ning Mao, Bingyang Li, Wenli Sun, Baibiao Huang, Ying Dai* and Chengwang Niu*. Antiferromagnetic topological crystalline insulator and mixed Weyl semimetal in two-dimensional NpAs monolayer. New J. Phys. 23,123018 (2021).
46. Ning Mao, Xiangting Hu, Hao Wang, Ying Dai*, Baibiao Huang, Yuriy Mokrousov, and Chengwang Niu*. Magnetism-mediated transition between crystalline and higher-order topological phases in NpSb. Phys. Rev. B 103, 195152 (2021).
45. Xiangting Hu, Ning Mao, Hao Wang, Ying Dai*, Baibiao Huang, and Chengwang Niu*. Quantum spin Hall effect in antiferromagnetic topological heterobilayers. Phys. Rev. B 103, 085109 (2021).
2020年论文
44. Chengwang Niu, Hao Wang, Ning Mao, Baibiao Huang, Yuriy Mokrousov, and Ying Dai*. Antiferromagnetic Topological Insulator with Nonsymmorphic Protection in Two Dimensions. Phys. Rev. Lett. 124, 066401 (2020).
43. Hao Wang, Ning Mao, Chengwang Niu*, Shiying Shen, Myung-Hwan Whangbo, Baibiao Huang, and Ying Dai*. Ferromagnetic Dual Topological Insulator in Two-Dimensional Honeycomb Lattice. Mater. Horiz. 7, 2431 (2020).
42. Ning Mao, Hao Wang, Xiangting Hu, Chengwang Niu*, Baibiao Huang, and Ying Dai*. Antiferromagnetic Topological Insulator in Stable Exfoliated Two-Dimensional Materials. Phys. Rev. B 102, 115412 (2020).
2019年论文
41. Chengwang Niu#*, Jan-Philipp Hanke#, Patrick M. Buhl, Hongbin Zhang, Lukasz Plucinski, Daniel Wortmann, Stefan Blügel, Gustav Bihlmayer, and Yuriy Mokrousov. Mixed topological semimetals driven by orbital complexity in two-dimensional ferromagnets. Nat. Commun. 10, 3179 (2019).
40. Ning Mao, Xiangting Hu, Chengwang Niu*, Baibiao Huang, and Ying Dai*. Dual topological insulator and insulator-semimetal transition in mirror-symmetric honeycomb materials. Phys. Rev. B 100, 205116 (2019).
39. Xiangting Hu, Ning Mao, Hao Wang, Chengwang Niu*, Baibiao Huang, and Ying Dai*. Two-dimensional ferroelastic topological insulator with tunable topological edge states in single-layer ZrAsX (X = Br and Cl). J. Mater. Chem. C 7, 9743 (2019).
38. Chengwang Niu, Ning Mao, Xiangting Hu, Baibiao Huang, and Ying Dai*. Quantum anomalous Hall effect and gate-controllable topological phase transition in layered EuCd2As2. Phys. Rev. B 99, 235119 (2019).
37. Cui Jin, Jing Shang, Xiao Tang, Xin Tan, Sean C. Smith, Chengwang Niu, Ying Dai* and Liangzhi Kou*. Enhanced stability and stacking dependent magnetic/electronic properties of 2D monolayer FeTiO3 on a Ti2CO2 substrate. J. Mater. Chem. C 7, 15308 (2019).
2018年及之前论文
36. Z. Zanolli,* C. Niu, G. Bihlmayer, Y. Mokrousov, P. Mavropoulos, M. J. Verstraete, and S. Blügel. Hybrid quantum anomalous Hall effect at graphene-oxide interfaces. Phys. Rev. B 98, 155404 (2018).
35. Liangzhi Kou*, Chengwang Niu, Huixia Fu, Yandong Ma, Binghai Yan, and Changfeng Chen. Tunable quantum order in bilayer Bi2Te3: Stacking dependent quantum spin Hall states. Appl. Phys. Lett. 112, 243103 (2018).
34. Markus Eschbach#, Martin Lanius#, Chengwang Niu#, Ewa Młynczak, Pika Gospodarič, Jens Kellner, Peter Schüffelgen, Mathias Gehlmann, Sven Döring, Elmar Neumann, Martina Luysberg, Gregor Mussler, Lukasz Plucinski*, Markus Morgenstern, Detlev Grützmacher, Gustav Bihlmayer, Stefan Blügel, and Claus M. Schneider. Bi1Te1 is a dual topological insulator. Nat. Commun. 8, 14976 (2017).
33. Chengwang Niu*, Patrick M. Buhl, Gustav Bihlmayer, Daniel Wortmann, Ying Dai, Stefan Blügel, and Yuriy Mokrousov. Two-dimensional topological nodal line semimetal in layered X2Y (X = Ca, Sr, and Ba; Y = As, Sb, and Bi). Phys. Rev. B 95, 235138 (2017).
32. Chengwang Niu*, Patrick M. Buhl, Gustav Bihlmayer, Daniel Wortmann, Ying Dai, Stefan Blügel, and Yuriy Mokrousov. Robust dual topological character with spin-valley polarization in a monolayer of the Dirac semimetal Na3Bi. Phys. Rev. B 95, 075404 (2017).
31. Jan-Philipp Hanke*, Frank Freimuth, Chengwang Niu, Stefan Blügel, and Yuriy Mokrousov. Mixed Weyl semimetals and low-dissipation magnetization control in insulators by spin-orbit torques. Nat. Commun. 8, 1479 (2017).
30. Qilong Sun, Ying Dai*, Chengwang Niu, Yandong Ma, Wei Wei, Lin Yu, and Baibiao Huang. Lateral topological crystalline insulator heterostructure. 2D Mater. 4, 025038 (2017).
29. Xinru Li, Ying Dai*, Chengwang Niu, Yandong Ma, Wei Wei, and Baibiao Huang. MoTe2 is a good match for GeI by preserving quantum spin Hall phase. Nano Res. 10, 2823 (2017).
28. Chengwang Niu*, Patrick M. Buhl, Gustav Bihlmayer, Daniel Wortmann, Stefan Blügel, and Yuriy Mokrousov. Two-dimensional topological crystalline insulator phase in quantum wells of trivial insulators. 2D Mater. 3, 025037 (2016).
27. Qunqun Liu, Ying Dai*, Yandong Ma, Xinru Li, Tiejun Li, Chengwang Niu, and Baibiao Huang. Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayer. Sci. Rep. 6, 34861 (2016).
26. Chengwang Niu*, Patrick M. Buhl, Gustav Bihlmayer, Daniel Wortmann, Stefan Blügel, and Yuriy Mokrousov. Two-Dimensional Topological Crystalline Insulator and Topological Phase Transition in TlSe and TlS Monolayers. Nano Lett. 15, 6071 (2015).
25. Chengwang Niu*, Patrick M. Buhl, Gustav Bihlmayer, Daniel Wortmann, Stefan Blügel, and Yuriy Mokrousov. Topological crystalline insulator and quantum anomalous Hall states in IV-VI-based monolayers and their quantum wells. Phys. Rev. B 91, 201401(R) (2015).
24. Chengwang Niu*, Gustav Bihlmayer, Hongbin Zhang, Daniel Wortmann, Stefan Blügel, and Yuriy Mokrousov. Functionalized bismuth films: Giant gap quantum spin Hall and valley-polarized quantum anomalous Hall states. Phys. Rev. B 91, 041303(R) (2015).
23. Yandong Ma*, Xiao Li, Liangzhi Kou, Binghai Yan, Chengwang Niu, Ying Dai, and Thomas Heine*. Two-dimensional inversion-asymmetric topological insulators in functionalized III-Bi bilayers. Phys. Rev. B 91, 235306 (2015).
22. Wei Wei, Ying Dai*, Chengwang Niu, Xiao Li, Yandong Ma, and Baibiao Huang. Electronic properties of two-dimensional van der Waals GaS/GaSe heterostructures. J. Mater. Chem. C 3, 11548 (2015).
21. Wei Wei, Ying Dai*, Chengwang Niu, and Baibiao Huang. Controlling the Electronic Structures and Properties of in-Plane Transition-Metal Dichalcogenides Quantum Wells. Sci. Rep. 5, 17578 (2015).
20. Chengwang Niu, Ying Dai*, Lin Yu, and Baibiao Huang. Realization of insulating massive Dirac fermion state in Bi2Te3 by co-substitution of magnetic and non-magnetic elements. Appl. Phys. Lett. 102, 092402 (2013).
19. Chengwang Niu, Ying Dai*, Meng Guo, Yandong Ma, Baibiao Huang, and Myung-Hwan Whangbo. Tunable topological surface and realization of insulating massive Dirac fermion state in Bi2Te2Se with co-substitution. J. Mater. Chem. C 1, 114 (2013).
18. Yandong Ma, Ying Dai*, Lin Yu, Chengwang Niu, and Baibiao Huang. Engineering a topological phase transition in beta-InSe via strain. New J. Phys. 15, 073008 (2013).
17. Chengwang Niu, Ying Dai*, Yingtao Zhu, Yandong Ma, Lin Yu, Shenghao Han, and Baibiao Huang. Realization of tunable Dirac cone and insulating bulk states in topological insulators (Bi1-xSbx)2Te3. Sci. Rep. 2, 976 (2012).
16. Chengwang Niu, Ying Dai*, Yingtao Zhu, Jibao Lu, Yandong Ma, and Baibiao Huang. Topological phase transition and unexpected mass acquisition of Dirac fermion in TlBi(S1-xSex)2. Appl. Phys. Lett. 101, 182101 (2012).
15. Chengwang Niu, Ying Dai*, Zhenkui Zhang, Yandong Ma, and Baibiao Huang. Ferromagnetism and manipulation of topological surface states in Bi2Se3 family by 2p light elements. Appl. Phys. Lett. 100, 252410 (2012).
14. Yandong Ma, Ying Dai*, Meng Guo, Chengwang Niu, and Baibiao Huang. Intriguing Behavior of Halogenated Two-Dimensional Tin. J. Phys. Chem. C 116, 12977 (2012).
13. Yandong Ma, Ying Dai*, Chengwang Niu, and Baibiao Huang. Halogenated Two-Dimensional Germanium: a Candidate Material Being of Quantum Spin Hall State. J. Mater. Chem. 22, 12587 (2012).
12. Yandong Ma, Ying Dai*, Meng Guo, Chengwang Niu, Yingtao Zhu, and Baibiao Huang. Evidence of the Existence of Magnetism in Pristine VX2 Monolayers (X = S, Se) and Their Strain-Induced Tunable Magnetic Properties. ACS Nano 6, 1695 (2012). Highlighted in Nature Nanotechnology 7, 141 (2012).
11. Yandong Ma, Ying Dai*, Meng Guo, Chengwang Niu, Zhenkui Zhang, and Baibiao Huang. Electronic and magnetic properties of the two-dimensional C4H-type polymer with strain effects, intrinsic defects and foreign atom substitutions. PhysChemChemPhys 14, 3651 (2012).
10. Chengwang Niu, Ying Dai*, Lin Yu, Meng Guo, Yandong Ma, and Baibiao Huang. Quantum anomalous Hall effect in doped ternary chalcogenide topological insulators TlBiTe2 and TlBiSe2. Appl. Phys. Lett. 99, 142502 (2011).
9. Chengwang Niu, Ying Dai*, Meng Guo, Wei Wei, Yandong Ma, and Baibiao Huang. Mn induced ferromagnetism and modulated topological surface states in Bi2Te3. Appl. Phys. Lett. 98, 252502 (2011).
8. Yandong Ma, Ying Dai*, Wei Wei, Chengwang Niu, Lin Yu, and Baibiao Huang. First-Principles Study of the Graphene@MoSe2 Heterobilayers. J. Phys. Chem. C 115, 20237 (2011).
7. Yandong Ma, Ying Dai*, Meng Guo, Wei Wei, Chengwang Niu, Jibao Lu, and Baibiao Huang. Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayers. PhysChemChemPhys 13, 15546 (2011).
6. Yandong Ma, Ying Dai*, Meng Guo, Chengwang Niu, Lin Yu, and Baibiao Huang. Strain-induced magnetic transitions in half-fluorinated single layers of BN, GaN and grapheme. Nanoscale 3, 2301 (2011).
5. Yandong Ma, Ying Dai*, Meng Guo, Chengwang Niu, Lin Yu, and Baibiao Huang. Magnetic properties of the semifluorinated and semihydrogenated 2D sheets of group-IV and III-V binary compounds. Appl. Surf. Sci. 257, 7845 (2011).
4. Wei Wei, Ying Dai*, Meng Guo, Chengwang Niu, and Baibiao Huang. Ag-mediated charge transfer from electron-doped SrTiO3 to CO and NO: a first-principles study. Surf. Sci. 605, 1331 (2011).
3. Yandong Ma, Ying Dai*, Meng Guo, Chengwang Niu, and Baibiao Huang. Graphene adhesion on MoS2 monolayer: An ab initio study. Nanoscale 3, 3883 (2011).
2. C. W. Niu, Kesong Yang, Yingbo Lv, Wei Wei, Ying Dai*, and Baibiao Huang. Electronic and magnetic properties of C-doped Mg3N2: A density functional theory study. Solid State Commun. 150, 2223 (2010).
1. C. W. Niu, G. F. Xu, Longjiang Liu, L. Kang, D. M. Tong*, and L. C. Kwek. Separable states and geometric phases of an interacting two-spin system. Phys. Rev. A 81, 012116 (2010).