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    具有GaN插入层的大功率碳化硅光导开关制备及其性能研究

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    • Project Name:具有GaN插入层的大功率碳化硅光导开关制备及其性能研究

    • Institution:集成电路学院

    • Leading Scientist:徐化勇

    • Supported by:省科技厅

    • Nature of Project:纵向

    • Project Level:省、部委级

    • Project Participants:徐化勇,左致远,彭燕,张恒

    • Project Number:kyxm-63543

    • Project Approval Number:ZR2016FB23

    • Date of Project Approval:2016-11-18

    • Scheduled Completion Time:2018-11-30

    • Date of Project Completion:2018-11-30

    • Date of Project Initiation:2016-11-01

    • Release Time:2019-04-18
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