Paper Publications

• [1]  李斌. 单晶金刚石声子非简谐衰减效应研究.  《人工晶体学报》,  52,  442-451, 2023. 
• [2]  陈可睿. Identification and formation mechanism of threading screw dislocations in 4H-SiC crystal.  JOURNAL OF ALLOYS AND COMPOUNDS,  2025. 
• [3]  陈可睿. Identification and formation mechanism of threading screw dislocations in 4H-SiC crystal.  JOURNAL OF ALLOYS AND COMPOUNDS ,  1040,  2025. 
• [4]  焦健. Low On-Resistance and Ultrafast Rise Time Based on Vertical Diamond Photoconductive Switch with NPN Structure.  ACS Photonics,  2024. 
• [5]  陈秋. Effect of nitrogen doping concentration on 4H-SiC laser slicing.  Journal of the American Ceramic Society,  2025. 
• [6]  胡秀飞. Roughness control in the processing of 2-inch polycrystalline diamond films on 4H-SiC wafers.  Materials Science in Semiconductor Processing,  184,  2024. 
• [7]  李华东. Dislocation proliferation at the growth crystal seed interface of physical vapor transport grown 4H-SiC crystals.  PHYSICA SCRIPTA Journal,  2024. 
• [8]  仲光磊. SiC 单晶生长初期表面台阶及微管特性.  硅酸盐学报,  2022. 
• [9]  Ge, Lei. High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed.  Journal of Physical Chemistry Letters,  14,  592, 2023. 
• [10]  胡国杰. Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field.  VACUUM,  222,  2024. 
• [11]  胡秀飞. Growth of 2-inch diamond films on 4H–SiC substrate by microwave plasma CVD for enhanced thermal performance.  VACUUM,  211,  2023. 
• [12]  熊希希. 低位错密度8英寸导电型碳化硅单晶衬底制备.  Journal of Inorganic Materials,  1-2, 2023. 
• [13]  田佳奇. Origins and characterization techniques of stress in SiC crystals: A review.  PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS,  2024. 
• [14]  王兴龙. Hot-zone design and optimization of resistive heater for SiC single crystal growth.  JOURNAL OF MATERIALS SCIENCE Journal,  2024. 
• [15]  仲光磊. Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder.  CrystEng Comm,  7690, 2022.