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    高质量半绝缘150 mm 4H-SiC 单晶生长研究

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    • Institution:晶体材料研究所

    • Title of Paper:高质量半绝缘150 mm 4H-SiC 单晶生长研究

    • Journal:《人工晶体学报》

    • First Author:彭燕

    • All the Authors:陈秀芳,胡小波,徐现刚

    • Document Code:lw-178896

    • Translation or Not:No

    • Date of Publication:2016-03

    • Release Time:2019-04-14
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