中文
Home > Scientific Research > Paper Publications

Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

Hits:

  • Affiliation of Author(s):晶体材料研究所

  • Journal:CrystEngComm

  • All the Authors:chenxiufang,pengyan,huxiaobo,xuxiangang

  • First Author:yangxianglong

  • Indexed by:Unit Twenty Basic Research

  • Document Code:5C7E420D9D96411ABAB320919607F80C

  • Volume:20

  • Issue:43

  • Page Number:6957

  • Translation or Not:no

  • Date of Publication:2018-11-21

  • Date of Publication:2018-11-21
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University		 Click:
  MOBILE Version

The Last Update Time:..