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Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces

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  • Affiliation of Author(s):晶体材料研究所

  • Journal:Materials science forum

  • All the Authors:chenxiufang,pengyan,xuxiangang

  • First Author:huxiaobo

  • Indexed by:Unit Twenty Basic Research

  • Document Code:lw-175588

  • Translation or Not:no

  • Date of Publication:2015-01-21

  • Date of Publication:2015-01-21
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