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    高纯半绝缘4H-SiC单晶的生长

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    • Institution:晶体材料研究所

    • Title of Paper:高纯半绝缘4H-SiC单晶的生长

    • Journal:《人工晶体学报》

    • First Author:徐现刚

    • All the Authors:陈秀芳,彭燕

    • Document Code:lw-175598

    • Translation or Not:No

    • Date of Publication:2014-10

    • Release Time:2019-10-22
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