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    Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

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    • Institution:晶体材料研究所

    • Title of Paper:Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

    • Journal:CrystEngComm

    • First Author:杨祥龙

    • All the Authors:陈秀芳,彭燕,胡小波,徐现刚

    • Document Code:5C7E420D9D96411ABAB320919607F80C

    • Volume:20

    • Issue:43

    • Page Number:6957

    • Translation or Not:No

    • Date of Publication:2018-11

    • Release Time:2019-10-24
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