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tRKxgI8SchzgTwsCn2QrLGEnj9zNdffUsfFFQjXywIZ6kpMa5Wcf86KtKe3X
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    Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

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    • Institution:晶体材料研究院

    • Title of Paper:Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

    • Journal:CrystEngComm

    • First Author:杨祥龙

    • All the Authors:徐现刚,胡小波,陈秀芳

    • Document Code:2018zxsei1205

    • Volume:22

    • Issue:43

    • Page Number:6957

    • Translation or Not:No

    • Date of Publication:2018-12

    • Release Time:2020-06-04
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