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Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

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  • Affiliation of Author(s):晶体材料研究院

  • Journal:CrystEngComm

  • All the Authors:chenxiufang,huxiaobo,xuxiangang

  • First Author:yangxianglong

  • Indexed by:Unit Twenty Basic Research

  • Document Code:2018zxsei1205

  • Volume:22

  • Issue:43

  • Page Number:6957

  • Translation or Not:no

  • Date of Publication:2018-12-30

  • Date of Publication:2018-12-30
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