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    Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption

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    • Institution:新一代半导体材料集成攻关大平台

    • Title of Paper:Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption

    • Journal:Applied Optics

    • First Author:肖龙飞

    • Document Code:2018zxsei1865

    • Volume:20

    • Issue:11

    • Page Number:2804

    • Translation or Not:No

    • Date of Publication:2018-12

    • Release Time:2021-05-22
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