中文

Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

Hits:

  • Affiliation of Author(s):晶体材料研究院

  • Journal:CRYSTENGCOMM

  • First Author:杨祥龙

  • Document Code:2E6077265C5949209BF66E69849ED035

  • Issue:43

  • Page Number:6957

  • Number of Words:2000

  • Translation or Not:no

  • Date of Publication:2018-11-21

  • Date of Publication:2018-11-21

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University
Click:
  MOBILE Version

The Last Update Time:..