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Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

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  • Affiliation of Author(s):新一代半导体材料研究院

  • Journal:MATERIALS TODAY COMMUNICATIONS

  • First Author:王希玮

  • Document Code:32143576C2254570B520E462205E4DBE

  • Issue:31

  • Number of Words:6

  • Translation or Not:no

  • Date of Publication:2022-04-15

  • Date of Publication:2022-04-15
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