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一种降低物理气相传输法生长SiC单晶中位错密度的方法

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  • Affilication of Author(s):晶体材料研究所

  • Patent Applicant:xuxiangang,huxiaobo,chenxiufang,pengyan

  • Type of Patent:发明

  • Application Number:201510394077.6

  • Number of Inventors:4

  • Service Invention or Not:no

  • Application Date:2015-07-07

  • Publication Date:2017-11-14

  • Authorization Date:2017-11-14

  • Publication Date:2017-11-14

  • Application Date:2015-07-07

  • Authorization Date:2017-11-14
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