The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage. Advanced Electronic Materials 2024, 10, 2300752.
发布时间：2024-09-09
点击次数：
- 论文名称：
- The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage. Advanced Electronic Materials 2024, 10, 2300752.
- 论文类型：
- 基础研究
- 影响因子：
- 6.8
- DOI码：
- 10.1002/aelm.202300752
- 是否译文：
- 否
- 发表时间：
- 2024-05
- 收录刊物：
- SCI
- 发布时间：
- 2024-09-09