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Ren Xue, born in October 1994, is a member of the Communist Party of China and an Shandong University of the Institute of integrated circuits.
School of Shandong University integrated circuits 
Shandong University School of Physics, master's degree and phd 
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Magnetic random access memory, magnetic ion device, electromagnetism. |
Magnetic control through ion control, electric field control, magnetic and low-power Spintronics. |
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(包干项目)轻金属插层调控CoGd亚铁磁薄膜磁性的机制研究 |
2025-01-01,2027-12-31 |
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Research on nano-electronic devices |
2023-09-01,2024-12-31 |
【1】张铭芳.Electrical Manipulation of Field-Free Magnetization Switching Driven by Spin-Orbit Torque in Amorphous Gradient-Mn3SnAdvanced Science,2025.
【2】张铭芳.Reversible and Non-Volatile Manipulation on the Spin-Orbit Torque in 3d-5d System of L10-FePt via Hydrogen MigrationAdvanced functional materials,2025.
【3】The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage. Advanced Electronic Materials 2024, 10, 2300752.,2024.
【4】Control of Compensation Temperature in CoGd Films through Hydrogen and Oxygen Migration under Gate Voltage. Nano Letters 2023, 23, (13), 5927-5933.. Nano Letters, 23:5927-5933,2023.
【5】Field-free switching of magnetization induced by spin–orbit torque in Pt/CoGd/Pt thin film. Applied Physics Letters 2022, 120 (25), 252403.
【6】Observation on Volatile and Nonvolatile Magnetic Reversions Mediated by Electric Current in Highly Conductive Gd3Fe5O12. The Journal of Physical Chemistry C 2022, 126 (17), 7660-7666.