Affiliation of Author(s): : 微电子学院

Title of Paper: : Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation

Journal: : Applied physics letters

All the Authors: : Yiming Wang,Feng Xianjin,Song A M

First Author: : 朱庚昌

Indexed by: : Unit Twenty Basic Research

Document Code: : lw-178680

Volume: : 109

Page Number: : 113503

Translation or Not: : no

Date of Publication: : 2016-09-12