Affiliation of Author(s): : 微电子学院

Title of Paper: : Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors

Journal: : Journal of Physics and Chemistry of Solids

All the Authors: : chenxiufang,xuxiangang,fengxianjin,Song A M

First Author: : 朱庚昌

Indexed by: : Unit Twenty Basic Research

Document Code: : 85535CE6C2014EA88B75ED455D46DDBD

Volume: : 129

Issue: : 无

Page Number: : 54

Translation or Not: : no

Date of Publication: : 2019-06-01