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Schottky-barrier thin-film transistors based on HfO2-capped InSe
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Institution:集成电路学院

Title of Paper:Schottky-barrier thin-film transistors based on HfO2-capped InSe

Journal:APPLIED PHYSICS LETTERS

First Author:辛倩

All the Authors:王一鸣,Shi Yanpeng,Yifei Philip Zhang,Song A M,辛倩

Document Code:7B2AFA27B7F54882ACFDC3B4111227BF

Volume:115

Issue:1

Number of Words:4500

Translation or Not:No

Date of Publication:2019-07

Release Time:2019-10-25

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Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Alma Mater : 山东大学

Education Level : Postgraduate (Doctoral)

Degree : Doctor

Status : Employed

School/Department : 集成电路学院

Faculty/School : School of Integrated Circuits,Shandong University

Business Address : 软件园校区

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