Song A M
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Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT
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Affiliation of Author(s): : 集成电路学院

Title of Paper: : Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT

Journal: : NANOTECHNOLOGY

First Author: : 郑帅英

Document Code: : 1754450335667867649

Volume: : 35

Issue: : 15

Number of Words: : 7

Translation or Not: : no

Date of Publication: : 2024-04-08

Personal information

Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Gender : Male

Alma Mater : 山东大学

Education Level : Postgraduate (Doctoral)

Degree : Doctor

Status : Employed

School/Department : 微电子学院

Business Address : 软件园校区

Email : songam@sdu.edu.cn

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