Affiliation of Author(s): : 集成电路学院
Title of Paper: : Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT
Journal: : NANOTECHNOLOGY
First Author: : 郑帅英
Document Code: : 1754450335667867649
Volume: : 35
Issue: : 15
Number of Words: : 7
Translation or Not: : no
Date of Publication: : 2024-04-08
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Alma Mater : 山东大学
Education Level : Postgraduate (Doctoral)
Degree : Doctor
Status : Employed
School/Department : 集成电路学院
Business Address : 软件园校区
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