Institution:集成电路学院
Title of Paper:Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT
Journal:Nanotechnology
First Author:郑帅英
Document Code:DFB94002A24C4981A267B49A56B9EC7A
Volume:35
Issue:0
Page Number:155203
Number of Words:7
Translation or Not:No
Date of Publication:2024-04
Release Time:2024-05-22
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Alma Mater : 山东大学
Education Level : Postgraduate (Doctoral)
Degree : Doctor
Status : Employed
School/Department : 集成电路学院
Faculty/School : School of Integrated Circuits,Shandong University
Business Address : 软件园校区
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