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A Strategy To Prepare High-Quality Monocrystalline Graphene: Inducing Graphene Growth with Seeding Chemical Vapor Deposition and Its Mechanism

Release time:2021-06-01|Hits:

Affiliation of Author(s):晶体材料研究院

Journal:ACS Applied Materials & Interfaces

First Author:李妍璐

Indexed by:Unit Twenty Basic Research

Document Code:30C0D22F63DB4CF596614121E63AC4D9

Issue:12

Translation or Not:no

Date of Publication:2019-12-11

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Theoretical prediction of eliminating the buffer layer and achieving charge neutrality for epitaxial graphene on 6H-SiC(0001) via boron compound intercalations
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Effect of Ag nanoparticles on wafer-scale quasi-free-standing graphene characterization by surface enhanced Raman spectroscopy

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