Publication
Research direction
Papers
(1)国星.
Preparation and multilayer transfer of high-quality monocrystalline graphene grown on centimeter-Cu (111) substrate
.VACUUM
.2023
,210
(2)陈可睿.
Identification and formation mechanism of threading screw dislocations in 4H-SiC crystal
.JOURNAL OF ALLOYS AND COMPOUNDS
.2025
(1040)
(3)王江风.
Decoding “black-white band” defects in PVT grown 4H-SiC and its suppression through thermal field optimization.pdf
.Materials Science in Semiconductor Processing
.2025
(200)
(4)王兴龙.
Induction frequency modulation for 4H-SiC growth: Thermal field evolution, dislocation suppression, and high-quality crystal preparation via PVT method
.JOURNAL OF ALLOYS AND COMPOUNDS
.2025
,1036
(5)陈可睿.
Identification and formation mechanism of threading screw dislocations in 4H-SiC crystal
.JOURNAL OF ALLOYS AND COMPOUNDS
.2025
,1040
(6)张年龙.
Dy3+ and Tm3+ doped structurally disordered LGS single crystals: growth, characterization, and electro-elastic properties
.CrystalEngComm
.2025
(7)吴吉朋.
Single crystal growth, characterization, piezoelectric property, and spectral analysis for Zn4B6O13 and Ni: Zn4B6O13 crystals
.CrystEngComm
.2025
,27
(5):616
(8)吴吉朋.
Er3+ doped BZBO single crystal: Growth and electro-elastic property characterization
.JOURNAL OF ALLOYS AND COMPOUNDS
.2024
,1006
(9)张年龙.
Tb3+-Doped LGS Crystals: Crystal Growth and Electro-Elastic Features
.Crystals
.2025
,15
(3)
(10)刘风景.
Enhancing and broadening the photoresponse of CdS nanowire by constructing core–shell heterostructure
.APPLIED PHYSICS LETTERS
.2024
(125)
(11)王鹏.
Breaking the Thermodynamic Equilibrium for Monocrystalline Graphene Fabrication by Ambient Pressure Regulation
.ACS Applied Materials & Interfaces
.2024
,16
(49):68680-68692
(12)焦娇娇.
g-C3N4-based homojunction induced by Ag and P selective doping for improved photocatalytic H2 evolution coupled with tetracycline degradation: Type-II versus S-scheme mechanism
.Applied Surface Science
.2023
,639
(13)王兴龙.
Hot-zone design and optimization of resistive heater for SiC single crystal growth
.JOURNAL OF MATERIALS SCIENCE Journal
.2024
(19)
(14)王鹏.
The surface and interface evolution of graphene under air exposure
.2022 19TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2022 8TH INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS,
.2022
(15)仲光磊.
Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder
.CrystEng Comm
.2022
(44):7690
(16)张洁.
Toward smart flexible self-powered near-UV photodetector of amorphous Ga2O3 nanosheet
.MATERIALS TODAY PHYSICS
.2023
(31)
(17)刘东.
Flexible Omnidirectional Self-Powered Photodetectors Enabled by Solution-Processed Two-Dimensional Layered PbI2 Nanoplates
.ACS Applied Materials & Interfaces
.2022
(41):46748
(18)孙丽.
Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC
.Nanomaterials
.2022
,12
(3)
(19)姜超.
Phase transition regulation and piezoelectric performance optimization of fresnoite crystals for high-temperature acceleration sensing
.Journal of Materials Chemistry C
.2025
,10
(1):180
(20)武广达.
Growth, Optical, and Spectroscopic Properties of Pure and Nd3+-Doped GdSr3(PO4)(3) Crystals with Disordered Structure
.Inorganic chenistry
.2022
,61
(1):170
(21)李迎仙.
Direct Synthesis of Graphene Dendrites on SiO2/Si Substrates by Chemical Vapor Deposition
.NANOSCALE RESEARCH LETTERS
.2020
,15
(1)
(22)罗兴云.
Charge-neutral epitaxial graphene on 6H-SiC(0001) via FeSi intercalation
.CARBON
.2019
,156
:187
(23)罗兴云.
Theoretical prediction of eliminating the buffer layer and achieving charge neutrality for epitaxial graphene on 6H-SiC(0001) via boron compound intercalations
.CARBON
.2020
,161
:323
(24)李妍璐.
A Strategy To Prepare High-Quality Monocrystalline Graphene: Inducing Graphene Growth with Seeding Chemical Vapor Deposition and Its Mechanism
.ACS Applied Materials & Interfaces
.2019
(12)
(25)孙丽.
Effect of Ag nanoparticles on wafer-scale quasi-free-standing graphene characterization by surface enhanced Raman spectroscopy
.MATERIALS RESEARCH EXPRESS
.2020
,7
(10)
(26)罗兴云.
Charge-neutral epitaxial graphene on 6HeSiC(0001) via FeSi intercalation
.Carbon
.2019
,156
(156):187
(27)李妍璐.
Theoretical prediction of eliminating the buffer layer and achieving charge neutrality for epitaxial graphene on 6HeSiC(0001) via boron compound intercalations
.Carbon
.2020
,161
(161):323
(28)于法鹏.
Induced growth of quasi-free-standing graphene on SiC substrates
.RSC advances
.2019
(29)谢雪健.
Sublimation growth and property characterization of p-type 4H-SiC by Al-B co-doping technique
.SCRIPTA MATERIALIA
.2019
(76-80):76
(30)于璨璨.
Uniform coverage of quasi-free standing monolayer graphene on SiC by hydrogen intercalation
.Journal of Materials Science-Materials in Electronics
.2017
,28
(4):3884
(31)张晶.
Preparation of bilayer graphene utilizing CuO as nucleation sites by CVD method
.Journal of Materials Science-Materials in Electronics
.2018
,29
(6):4495
(32)张晶.
Preparation of bilayer graphene utilizing CuO as nucleation sites by CVD method
.Journal of Materials Science-Materials in Electronics
.2018
,29
(6):4495
Patents
