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Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder
Release Time:2023-05-25
  • Institution:
    新一代半导体材料研究院
  • Journal:
    CrystEng Comm
  • First Author:
    仲光磊
  • Document Code:
    25FCCCAEF2E040C2B6642D5F6FCDC3EA
  • Issue:
    44
  • Page Number:
    7690
  • Number of Words:
    5000
  • Translation or Not:
    No
  • Date of Publication:
    2022-10
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