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Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder

Release time:2023-05-25|Hits:

Affiliation of Author(s):新一代半导体材料研究院

Journal:CrystEng Comm

First Author:仲光磊

Document Code:25FCCCAEF2E040C2B6642D5F6FCDC3EA

Issue:44

Page Number:7690

Number of Words:5000

Translation or Not:no

Date of Publication:2022-10-04

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