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一种p型SiC单晶生长的坩埚及方法
Release Time:2025-01-04
  • Institution:
    新一代半导体材料研究院
  • Type of Patent:
    Invent
  • Application Number:
    202310026577.9
  • Number of Inventors:
    5
  • Service Invention or Not:
    No
  • Application Date:
    2023-01-09
  • Publication Date:
    2024-12-31
  • Authorization Date:
    2024-12-31
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