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磷硅镉单晶的生长方法
Release Time:2018-12-06
  • Institution:
    晶体材料研究所
  • Type of Patent:
    发明
  • Application Number:
    201110083331.2
  • Number of Inventors:
    2
  • Service Invention or Not:
    No
  • Application Date:
    2011-04-02
  • Publication Date:
    2012-06-27
  • Authorization Date:
    2011-04-02
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