磷硅镉多晶料的双温区合成方法及装置

Release time:2018-12-06|Hits:

Affilication of Author(s):晶体材料研究所

Type of Patent:发明

Application Number:201110083468.8

Number of Inventors:2

Service Invention or Not:no

Application Date:2011-04-02

Publication Date:2012-07-04

Authorization Date:2011-04-02