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山东大学

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Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

Release Time:2019-10-24 Hits:

Institution:微电子学院
Journal:IEEE Transactions on Electron Devices
First Author:王一鸣
All the Authors:Shi Yanpeng,Li Yuxiang,王卿璞,辛倩,Song A M,王一鸣
Document Code:C5CBECE11DEA4D5F8D7D91066B25046F
Volume:65
Issue:4
Page Number:1377
Translation or Not:No
Date of Publication:2018-04

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