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All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory

Release Time:2019-10-24 Hits:

Institution:集成电路学院
Journal:IEEE Electron Device Letters
First Author:杨进
All the Authors:辛倩,Song A M,王一鸣,王卿璞,周莉
Document Code:2532544AF4F5476799F6AF1C6F32887A
Volume:39
Issue:12
Page Number:1876
Number of Words:4000
Translation or Not:No
Date of Publication:2018-11

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